PD515BA NIKOSEM | Alldatasheet

Document overview

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Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current3 TC = 25 °C ID -15 A TC = 100 °C -9.8 Pulsed Drain Current1 IDM -30 Avalanche Current IAS -11 Avalanche Energy L = 0.1mH EAS 6 mJ Power Dissipation TC = 25 °C PD 25 W TC = 100 °C 10 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 5 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is -10A. PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 65mΩ -15A G S D 1. GATE 2. DRAIN 3. SOURCE

REV 0.9 F-20-2 P-Channel Enhancement Mode Field Effect Transistor PD515BA TO-252 Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -20 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -0.3 -0.7 -1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±8V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0V -1 VDS = -10V, VGS = 0V, TJ = 125 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -2.5A 50 65 mΩ VGS = -2.5V, ID = -2A 63 85 VGS = -1.8V, ID = -1A 82 120 Forward Transconductance1 gfs VDS = -5V, ID = -2.5A 11 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -10V, f = 1MHz 576 pF Output Capacitance Coss 66 Reverse Transfer Capacitance Crss 50 Gate Resistance Rg VGS =0V, VDS = 0V, f = 1MHz 8 Ω Total Gate Charge2 Qg (VGS=-4.5V) VDS = -10V , ID = -2.5A 6.7 nC Qg(VGS=-2.5V) 4 Gate-Source Charge2 Qgs 0.8 Gate-Drain Charge2 Qgd 1.8 Turn-On Delay Time2 td(on) VDS = -10V ,ID  -2.5A, VGS = -4.5V, RGEN =6Ω nS Rise Time2 tr 37 Turn-Off Delay Time2 td(off) 52 Fall Time2 tf 60 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS -20 A Forward Voltage1 VSD IF = -2.5A, VGS = 0V -1.2 V Reverse Recovery Time trr IF = -2.5A, dlF/dt = 100A / S 7 nS Reverse Recovery Charge Qrr 1 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature. 3Package limitation current is -10A.

REV 0.9 F-20-2 P-Channel Enhancement Mode Field Effect Transistor PD515BA TO-252 Halogen-Free & Lead-Free NIKO-SEM CRSS 100 200 300 400 500 600 700 0 5 10 15 20 0 1 2 3 4 5 On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) 25℃ 125℃ -20℃ CISS COSS 0.04 0.08 0.12 0.16 0.2 0 3 6 9 12 15 VGS=-4.5V VGS=-2.5V VGS=-1.8V 0.02 0.04 0.06 0.08 0.1 0 2 4 6 8 10 ID=-2.5A 0.9 1.8 2.7 3.6 4.5 0 2 4 6 8 10 VDS=-10V ID=-2.5A 0 1 2 3 4 5 VGS=-10V VGS=-6V VGS=-4.5V VGS=-2.5V VGS=-1.6V VGS=-1.8V VGS=-1.9V VGS=-2V

REV 0.9 F-20-2 P-Channel Enhancement Mode Field Effect Transistor PD515BA TO-252 Halogen-Free & Lead-Free NIKO-SEM T1 , Square Wave Pulse Duration[sec] On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance -VSD, Source-To-Drain Voltage(V) 25℃ 150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-4.5V ID=-2.5A 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 5˚C/W TC=25˚C DC 100ms 10ms 1ms 100 1 10 100 NOTE : 1.VGS= -4.5V 2.TC=25˚C 3.RθJC = 5˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC