PC561BA NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±20 V Continuous Drain Current TA = 25 °C ID -5.7 A TA = 70 °C -4.5 Pulsed Drain Current1 IDM -20 Avalanche Current IAS -12 Avalanche Energy L = 0.1mH EAS 7 mJ Power Dissipation3 TA = 25 °C PD 2.5 W TA = 70 °C 1.6 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 50 °C/W Junction-to-Ambient2 Steady-State RJA 73 Junction-to-Case Steady-State RJc 18 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. 3The Power dissipation is based on RJA t ≦10s value. 2 31 1. GATE 2. DRAIN 3. SOURCE
REV 1.0 F-23-1 P-Channel Enhancement Mode Field Effect Transistor PC561BA SOT-89 Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1.3 -1.6 -2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V -1 VDS = -20V, VGS = 0V, TJ = 55 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -4A 46 85 mΩ VGS = -10V, ID = -4A 32 45 Forward Transconductance1 gfs VDS = -5V, ID = -4A 10 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1MHz 585 pF Output Capacitance Coss 90 Reverse Transfer Capacitance Crss 67 Total Gate Charge2 Qg(VGS=-10V) VDS = -15V , VGS =-10V, ID = -4A nC Qg(VGS=-4.5V) 6 Gate-Source Charge2 Qgs 1.5 Gate-Drain Charge2 Qgd 3.3 Turn-On Delay Time2 td(on) VDD = -15V, VGS = -10V ID -4A, RG = 6Ω nS Rise Time2 tr 24 Turn-Off Delay Time2 td(off) 18 Fall Time2 tf 39 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -2 A Forward Voltage1 VSD IF = -4A, VGS = 0V -1.1 V Reverse Recovery Time trr IF = -4A, dlF/dt = 100A / S 10 nS Reverse Recovery Charge Qrr 2 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.0 F-23-1 P-Channel Enhancement Mode Field Effect Transistor PC561BA SOT-89 Halogen-Free & Lead-Free NIKO-SEM C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 0 1 2 3 4 5 Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic Gate charge Characteristics Characteristics 25℃ -20℃ 125℃ CISS COSS 0 3 6 9 12 15 VDS=-15V ID=-4A 0 1 2 3 4 5 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-4V VGS=-3.5V 0.02 0.04 0.06 0.08 0.1 0 3 6 9 12 15 VGS=-10V VGS=-4.5V 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=-4A
REV 1.0 F-23-1 P-Channel Enhancement Mode Field Effect Transistor PC561BA SOT-89 Halogen-Free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) T1 , Square Wave Pulse Duration[sec] -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature Power(W) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-4A 25℃ 150℃ 0.1 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 73˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= -10V 2.TA=25˚C 3.RθJA = 73˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 73 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA