PC015HVA NIKOSEM | Alldatasheet

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REV 1.0 H-25-2 Dual N-Channel Enhancement Mode Field Effect Transistor PC015HVA SOP-8 Halogen-free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TA = 25 °C ID 1.4 A TA = 70 °C 1.1 Pulsed Drain Current1 IDM 9 Avalanche Current IAS 2.1 Avalanche Energy L = 1mH EAS 2.2 mJ Power Dissipation TA = 25 °C PD 1.5 W TA = 70 °C 0.9 Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RθJA 85 °C / W 1Pulse width limited by maximum junction temperature. 2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 150 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.7 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 120V, VGS = 0V 1 VDS = 100V, VGS = 0V, TJ = 55 °C 10 G : GATE D : DRAIN S : SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 300mΩ 1.4A

REV 1.0 H-25-2 Dual N-Channel Enhancement Mode Field Effect Transistor PC015HVA SOP-8 Halogen-free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 1.4A 203 450 mΩ VGS = 10V, ID = 1.4A 199 300 Forward Transconductance1 gfs VDS = 10V, ID = 1.4A 10 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 611 pF Output Capacitance Coss 42 Reverse Transfer Capacitance Crss 27 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.4 Ω Total Gate Charge2 Qg VDS = 75V , VGS = 10V, ID = 1.4A nC Gate-Source Charge2 Qgs 1.4 Gate-Drain Charge2 Qgd 4 Turn-On Delay Time2 td(on) VDD = 75V ID  1.4A, VGS = 10V, RGEN = 6Ω nS Rise Time2 tr 6.6 Turn-Off Delay Time2 td(off) 29 Fall Time2 tf 6 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 1.6 A Forward Voltage1 VSD IF = 1.4 A, VGS = 0V 1.3 V Reverse Recovery Time trr IF=1.4A, dI/dt=100A/μs 43 nS Reverse Recovery Charge Qrr 21 uC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature.

REV 1.0 H-25-2 Dual N-Channel Enhancement Mode Field Effect Transistor PC015HVA SOP-8 Halogen-free & Lead-Free NIKO-SEM 0.1 0.2 0.3 0.4 0.5 0 1.8 3.6 5.4 7.2 9 VGS=10V VGS=4.5V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=1.4A 1.8 3.6 5.4 7.2 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.9V VGS=2.7V VGS=2.5V 25℃ 125℃ -20℃ 1.8 3.6 5.4 7.2 0 1 2 3 4 5 0.1 0.2 0.3 0.4 0.5 2 4 6 8 10 ID=1.4A CISS COSS CRSS 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30

REV 1.0 H-25-2 Dual N-Channel Enhancement Mode Field Effect Transistor PC015HVA SOP-8 Halogen-free & Lead-Free NIKO-SEM 100ms 10ms 1ms 0.01 0.1 100 1 10 100 1000 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 85˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) DC Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 0 3 6 9 12 15 VDS=75V ID=1.4A 25℃ 150℃ 0.1 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 85˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 85 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA