PB836BX NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Pulsed Drain Current1 IDM 37 A Continuous Drain Current TA = 25 °C ID 9.2 TA = 70 °C 7.3 Avalanche Current IAS 17 Avalanche Energy L = 0.1mH EAS 14 mJ Power Dissipation TA = 25 °C PD 1.4 W TA = 70 °C 0.9 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 Steady-State RJA 90 °C／W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 9.9mΩ 9.2A
REV0.8 K-7-5 N-Channel Enhancement Mode Field Effect Transistor PB836BX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.7 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 9.2A 12.5 17.5 mΩ VGS = 10V, ID = 9.2A 7.9 9.9 Forward Transconductance1 gfs VDS = 5V, ID = 9.2A 58 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 561 pF Output Capacitance Coss 292 Reverse Transfer Capacitance Crss 35 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.8 Ω Total Gate Charge2 Qg VGS = 10V VDS = 15V , VGS = 10V, ID = 9.2A nC VGS = 4.5V 6.4 Gate-Source Charge2 Qgs 1.6 Gate-Drain Charge2 Qgd 3.3 Turn-On Delay Time2 td(on) VDS = 15V , ID 9.2A, VGS = 10V, RGEN =6Ω 6.4 nS Rise Time2 tr 62 Turn-Off Delay Time2 td(off) 19 Fall Time2 tf 77 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 1.2 A Forward Voltage1 VSD IF = 9.2A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 9.2A, dlF/dt = 100A / S 15 nS Reverse Recovery Charge Qrr 4.1 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.