PB6C4JU NIKOSEM | Alldatasheet

Document overview

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Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Products Integrated ESD diode with ESD Protected up to 2KV.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications.
  • Protable Devices for Battery PACK Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current TA = 25 ° C ID A TA = 70 ° C 6 Pulsed Drain Current1 IDM 25 Avalanche Current IAS 13 Avalanche Energy3 EAS 8.5 mJ Power Dissipation TA = 25 ° C PD 1.8 W TA = 70 ° C 1.2 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 68 °C / W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 1,2:S1 3:G1 4:G2 5,6:S2 7:D1/D2 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 19.5mΩ 7A

REV 1.1 J-4-1 Dual N-Channel Enhancement Mode Field Effect Transistor PB6C4JU TDFN 2x3 -6 Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 20 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 0.35 0.8 1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±8V ±30 uA Zero Gate Voltage Drain Current IDSS VDS = 16V, VGS = 0V 1 VDS=10V, VGS=0V, TJ=125 ° C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 3A 14.8 19.5 mΩ VGS = 3.8V, ID = 3A 15.3 23 VGS = 3.1V, ID = 3A 16.5 24.5 VGS = 2.5V, ID = 3A 18.6 28 VGS = 1.8V, ID = 3A 28 40 Forward Transconductance1 gfs VDS = 5V, ID = 3A 30 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1MHz 593 pF Output Capacitance Coss 111 Reverse Transfer Capacitance Crss 85 Total Gate Charge2 Qg(VGS=4.5V) VDS = 10V, ID = 3A 8.2 nC Qg(VGS=3.8V) 7 Gate-Source Charge2 Qgs 0.7 Gate-Drain Charge2 Qgd 3 Turn-On Delay Time2 td(on) VDD = 10V ID  3A, VGS = 4.5V, RGS = 6Ω nS Rise Time2 tr 25 Turn-Off Delay Time2 td(off) 35 Fall Time2 tf 13 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 1.5 A Forward Voltage1 VSD IF = 3A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 3A, dlF/dt = 100A / S 10 nS Reverse Recovery Charge Qrr 2.6 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 1.1 J-4-1 Dual N-Channel Enhancement Mode Field Effect Transistor PB6C4JU TDFN 2x3 -6 Halogen-Free & Lead-Free NIKO-SEM CRSS 100 200 300 400 500 600 700 800 0 5 10 15 20 On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) 25℃ 125℃ -20℃ CISS COSS 0.9 1.8 2.7 3.6 4.5 0 2 4 6 8 10 VDS=10V ID=3A 0 1 2 3 4 5 VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3.9V VGS=3.8V VGS=3.1V VGS=2.5V VGS=2V VGS=1.8V 0.01 0.02 0.03 0.04 0.05 0 4 8 12 16 20 VGS=3.1V VGS=3.8V VGS=4.5V VGS=1.8V VGS=2.5V 0.01 0.02 0.03 0.04 0.05 ID=3A 0 1 2 3 4 5

REV 1.1 J-4-1 Dual N-Channel Enhancement Mode Field Effect Transistor PB6C4JU TDFN 2x3 -6 Halogen-Free & Lead-Free NIKO-SEM On-Resistance VS Temperature TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) 25℃ 150℃ 0.1 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 68˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 4.5V 2.TA=25˚C 3.RθJA = 68˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 68 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA Drain to Source ON-Resistance(mΩ) -50 0 50 100 150