PB606BX

PB606BX NIKOSEM | Alldatasheet

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REV 0.91 E-27-5 N-Channel Enhancement Mode Field Effect Transistor PB606BX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TA = 25 °C ID 7.3 A TA = 70 °C 5.9 Pulsed Drain Current1 IDM 21 Avalanche Current IAS 12.8 Avalanche Energy L = 0.1mH EAS 8.2 mJ Power Dissipation TA = 25 °C PD 1.5 W TA = 70 °C 1 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 80 °C／W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.75 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 6A 19 27 mΩ VGS = 10V, ID = 7A 13 18 Forward Transconductance1 gfs VDS = 10V, ID = 7A 31 S G D S PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 18mΩ 7.3A G : GATE D : DRAIN S : SOURCE G D D#1 D D S 100% RG Test , 100% UIL Test

REV 0.91 E-27-5 N-Channel Enhancement Mode Field Effect Transistor PB606BX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 329 pF Output Capacitance Coss 68 Reverse Transfer Capacitance Crss 48 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.6 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 15V , ID = 7A 8.1 nC Qg(VGS=4.5V) 4.5 Gate-Source Charge2 Qgs 1.1 Gate-Drain Charge2 Qgd 2.4 Turn-On Delay Time2 td(on) VDD = 15V ID  7A, VGEN = 10V, RG = 6Ω nS Rise Time2 tr 17 Turn-Off Delay Time2 td(off) 37 Fall Time2 tf 18 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 1.5 A Forward Voltage1 VSD IF = 7A, VGS = 0V 1 V Reverse Recovery Time trr IF = 7A , dlF/dt = 100A / S 9.6 nS Reverse Recovery Charge Qrr 2.9 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 0.91 E-27-5 N-Channel Enhancement Mode Field Effect Transistor PB606BX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM 25℃ 125℃ -20℃ 0 1 2 3 4 5 Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0 1 2 3 4 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3V VGS=4V CISS COSS CRSS 100 150 200 250 300 350 400 0 5 10 15 20 25 30 VDS, Drain-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) IS , Source Current(A) 0 2 4 6 8 10 VDS=15V ID=7A 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=7A 25℃ 150℃ 0.1 100

REV 0.91 E-27-5 N-Channel Enhancement Mode Field Effect Transistor PB606BX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance ID , Drain Current(A) Power(W) Single Pulse Time(s) T1 , Square Wave Pulse Duration[sec] single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 80 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 80˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 80˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)