PB600BA NIKOSEM | Alldatasheet
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REV 1.0 D-38-3 N-Channel Enhancement Mode Field Effect Transistor PB600BA PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TA = 25 °C ID A TA = 70 °C 7.2 Pulsed Drain Current1 IDM 27 Avalanche Current IAS 12.6 Avalanche Energy L = 0.1mH EAS 7.9 mJ Power Dissipation TA = 25 °C PD 1.7 W TA = 70 °C 1.1 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 71.7 °C／W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.7 2.5 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 9A 11 17.5 mΩ VGS = 10V, ID = 9A 9 12 Forward Transconductance1 gfs VDS = 10V, ID = 9A 45 S G D S PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 12mΩ 9A G : GATE D : DRAIN S : SOURCE
REV 1.0 D-38-3 N-Channel Enhancement Mode Field Effect Transistor PB600BA PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 706 pF Output Capacitance Coss 103 Reverse Transfer Capacitance Crss 74 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 3.1 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 15V , ID = 9A nC Qg(VGS=4.5V) 8 Gate-Source Charge2 Qgs 2.6 Gate-Drain Charge2 Qgd 3.6 Turn-On Delay Time2 td(on) VDD = 15V ID 9A, VGEN = 10V, RG = 6Ω nS Rise Time2 tr 37 Turn-Off Delay Time2 td(off) 48 Fall Time2 tf 25 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 1.5 A Forward Voltage1 VSD IF = 9A, VGS = 0V 1.1 V Reverse Recovery Time trr IF = 9A , dlF/dt = 100A / S 11 nS Reverse Recovery Charge Qrr 3 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.0 D-38-3 N-Channel Enhancement Mode Field Effect Transistor PB600BA PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM 0 3 6 9 12 15 VDS=15V ID=9A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=9A Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3V VGS=2.5V 25℃ 125℃ -20℃ 0 1 2 3 4 5 CISS COSS CRSS 100 200 300 400 500 600 700 800 900 0 5 10 15 20 25 30 25℃ 150℃ 0.1 100 VDS, Drain-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) IS , Source Current(A)
REV 1.0 D-38-3 N-Channel Enhancement Mode Field Effect Transistor PB600BA PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Transient Thermal Response Curve DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 71.7˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 71.7˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 71.7 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]