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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low R DS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Products Integrated ESD diode with ESD Protected up to 2KV.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±8 V Continuous Drain Current TA = 25 °C ID A TA = 70 °C 3.9 Pulsed Drain Current1 I DM 20 Power Dissipation TA = 25 °C PD 1.4 W TA = 70 °C 0.9 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 86 °C／W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe. 1 : S1. 4 : S2. 2 : G1. 5 : G2. 3 : D2. 6 : D1. 100% RG Test , 100% UIL Test

REV1.0 G-20-2 Dual N-Channel Enhancement Mode Field Effect Transistor PB5G8JW PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 20 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 0.5 0.7 1 Gate-Body Leakage I GSS V DS = 0V, VGS = ±8V ±10 uA Zero Gate Voltage Drain Current I DSS VDS = 16V, VGS = 0V 1 VDS = 10V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 5A 22 35 mΩVGS = 2.5V, ID = 4.5A 27 38 VGS = 1.8V, ID = 2A 35 55 Forward Transconductance1 g fs V DS = 5V, ID = 5A 30 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 10V, f = 1MHz 506 pFOutput Capacitance C oss 82 Reverse Transfer Capacitance C rss 66 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 1.8 Ω Total Gate Charge2 Qg(VGS=4.5V) VDS = 10V , ID = 5A nCQg(VGS=2.5V) 4.3 Gate-Source Charge2 Q gs 0.6 Gate-Drain Charge2 Q gd 2.3 Turn-On Delay Time2 t d(on) VDD = 10V ID  5A, VGEN = 4.5V, RG = 6Ω nS Rise Time2 t r 35 Turn-Off Delay Time2 t d(off) 24 Fall Time2 t f 16 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 1.4 A Forward Voltage1 V SD I F = 5A, VGS = 0V 1 V Reverse Recovery Time t rr IF = 5A , dlF/dt = 100A / S 8.8 nS Reverse Recovery Charge Q rr 1.4 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV1.0 G-20-2 Dual N-Channel Enhancement Mode Field Effect Transistor PB5G8JW PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=4.5V ID=5A CISS COSS CRSS 100 200 300 400 500 600 0 5 10 15 20 25 30 25℃ 125℃ -20℃ 012345 0.02 0.04 0.06 0.08 0.1 ID=5A 0.02 0.04 0.06 0.08 0.1 0369 1 2 1 5 VGS=4.5V VGS=1.8V VGS=2.5V 012345 VGS=4.5V VGS=3.5V VGS=3V VGS=2.5V VGS=2V VGS=1.5V VGS=1.8V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)

REV1.0 G-20-2 Dual N-Channel Enhancement Mode Field Effect Transistor PB5G8JW PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 86 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 4.5V 2.TA = 25˚C 3.RθJA = 86˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.0001 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 86˚C/W TA = 25˚C 25℃ 150℃ 0.1 100 02468 1 0 VDS=10V ID=5A Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]