PB5E1BX NIKOSEM | Alldatasheet

Document overview

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Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±25 V Continuous Drain Current TA = 25 °C ID -7.5 A TA = 70 °C -6 Pulsed Drain Current1 IDM -33 Power Dissipation3 TA = 25 °C PD 3.6 W TA = 70 °C 2.3 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA °C／W Steady-State 60 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe. 3The Power dissipation is based on RJA t ≦10s value. PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 35mΩ -7.5A G : GATE D : DRAIN S : SOURCE

REV1.0 I-19-5 P-Channel Enhancement Mode Field Effect Transistor PB5E1BX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -40 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1.3 -1.6 -2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -32V, VGS = 0V -1 VDS = -30V, VGS = 0V, TJ = 55 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -3.7A 41 50 mΩ VGS = -10V, ID = -4.4A 30 35 Forward Transconductance1 gfs VDS = -10V, ID = -4.4A 15 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -20V, f = 1MHz 806 pF Output Capacitance Coss 110 Reverse Transfer Capacitance Crss 92 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 12.2 Ω Total Gate Charge2 Qg VDS = -10V , VDS = -20V , ID = -4.4A 19.5 nC Gate-Source Charge2 Qgs 2 Gate-Drain Charge2 Qgd 5 Turn-On Delay Time2 td(on) VDD = -20V ID  -4.4A, VGEN = -10V, RG = 6Ω nS Rise Time2 tr 26 Turn-Off Delay Time2 td(off) 88 Fall Time2 tf 61 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -3 A Forward Voltage1 VSD IF = -4.4A, VGS = 0V -1.2 V Reverse Recovery Time trr IF = -4.4A , dlF/dt = 100A / S 13 nS Reverse Recovery Charge Qrr 8.5 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV1.0 I-19-5 P-Channel Enhancement Mode Field Effect Transistor PB5E1BX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 6 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-3.1V VGS=-2.8V VGS=-2.5V 25℃ 125℃ -20℃ 0 1 2 3 4 5 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=-4.4A 0.02 0.04 0.06 0.08 0.1 0 3 6 9 12 15 VGS=-10V VGS=-4.5V CISS COSS CRSS 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 0 4 8 12 16 20 VDS=-20V ID=-4.4A Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic Gate charge Characteristics Characteristics

REV1.0 I-19-5 P-Channel Enhancement Mode Field Effect Transistor PB5E1BX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(sec) -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-4.4A 25℃ 125℃ 100 DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = -10V 2.TA =25˚C 3.RθJA = 60 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 60 ˚C/W TA = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 60 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA