PB5C5JW NIKOSEM | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Products Integrated ESD diode with ESD Protected.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current TA = 25 °C ID -3.1 A TA = 70 °C -2.5 Pulsed Drain Current1 IDM -12 Power Dissipation TA = 25 °C PD 1.3 W TA = 70 °C 0.85 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 94 °C／W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe. 1 : S1. 4 : S2. 2 : G1. 5 : G2. 3 : D2. 6 : D1. 100% RG Test , 100% UIL Test

REV1.0 I-26-4 Dual P-Channel Enhancement Mode Field Effect Transistor PB5C5JW PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -20 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -0.5 -0.9 -1.2 Gate-Body Leakage IGSS VDS = 0V, VGS = ±10V ±30 uA Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0V -1 VDS = -10V, VGS = 0V, TJ = 55 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -2.5A 61 85 mΩ VGS = -2.5V, ID = -2A 86 135 Forward Transconductance1 gfs VDS = -5V, ID = -2.5A 13 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -10V, f = 1MHz 432 pF Output Capacitance Coss 77 Reverse Transfer Capacitance Crss 59 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 7.2 Ω Total Gate Charge2 Qg(VGS=-4.5V) VDS = -10V , ID = -2.5A 5.5 nC Qg(VGS=-2.5V) 3.4 Gate-Source Charge2 Qgs 0.8 Gate-Drain Charge2 Qgd 1.9 Turn-On Delay Time2 td(on) VDD = -10V ID  -2.5A, VGEN = -4.5V, RG = 6Ω 8.7 nS Rise Time2 tr 39 Turn-Off Delay Time2 td(off) 26 Fall Time2 tf 39 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -1.1 A Forward Voltage1 VSD IF = -2.5A, VGS = 0V -1.2 V Reverse Recovery Time trr IF = -2.5A , dlF/dt = 100A / S 10 nS Reverse Recovery Charge Qrr 4.2 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV1.0 I-26-4 Dual P-Channel Enhancement Mode Field Effect Transistor PB5C5JW PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) CISS COSS CRSS 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-4.5V ID=-2.5A 0 1 2 3 4 5 VGS=-4.5V VGS=-4V VGS=-3.5V VGS=-2.5V VGS=-1.7V VGS=-2V 0.04 0.08 0.12 0.16 0.2 0 3 6 9 12 VGS=-4.5V VGS=-2.5V 0.04 0.08 0.12 0.16 0.2 0 2 4 6 8 ID=-2.5A 0 1 2 3 4 5 -25℃ 25℃ 125℃

REV1.0 I-26-4 Dual P-Channel Enhancement Mode Field Effect Transistor PB5C5JW PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) -VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage -VSD, Source-To-Drain Voltage(V) -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 100 25℃ 150℃ single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 94 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 94 ˚C/W TA = 25˚C 0.9 1.8 2.7 3.6 4.5 0 1.5 3 4.5 6 VDS=-10V ID=-2.5A DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = -4.5V 2.TA =25˚C 3.RθJA = 94 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)