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REV1.1 H-15-4 P-Channel Enhancement Mode Field Effect Transistor PB5B5BX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM G S D ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±12 V Continuous Drain Current TA = 25 °C ID -7.9 A TA = 70 °C -6.3 Pulsed Drain Current1 I DM -32 Power Dissipation TA = 25 °C PD 2.2 W TA = 70 °C 1.4 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 57 °C／W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -20 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = -250A -0.65 -0.9 -1.2 Gate-Body Leakage I GSS V DS = 0V, VGS = ±12V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = -16V, VGS = 0V -1 VDS = -10V, VGS = 0V, TJ = 55 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -2.5V, ID = -2A 24 35 mΩVGS = -4.5V, ID = -2.5A 17.5 25 VGS = -10V, ID = -2.5A 14.8 22 Forward Transconductance1 g fs V DS = -10V, ID = -2.5A 17 S PRODUCT SUMMARY V(BR)DSS R DS(ON) I D -20V 22m Ω -7.9A G : GATE D : DRAIN S : SOURCE
REV1.1 H-15-4 P-Channel Enhancement Mode Field Effect Transistor PB5B5BX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance C iss VGS = 0V, VDS = -10V, f = 1MHz 1325 pF Output Capacitance C oss 188 Reverse Transfer Capacitance C rss 168 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 10 Ω Total Gate Charge2 Q g VDS = -10V , VDS = -10V , ID = -2.5A nC Gate-Source Charge2 Q gs 1.4 Gate-Drain Charge2 Q gd 5.2 Turn-On Delay Time2 t d(on) VDD = -10V ID -2.5A, VGEN = -10V, RG = 6Ω nS Rise Time2 t r 16 Turn-Off Delay Time2 t d(off) 62 Fall Time2 t f 36 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S -1.8 A Forward Voltage1 V SD I F = -2.5A, VGS = 0V -1.2 V Reverse Recovery Time t rr IF = -2.5A , dlF/dt = 100A / S 41 nS Reverse Recovery Charge Q rr 26 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.1 H-15-4 P-Channel Enhancement Mode Field Effect Transistor PB5B5BX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM 0.02 0.04 0.06 0.08 0.1 02468 1 0 ID=-2.5A 0.01 0.02 0.03 0.04 0.05 0.06 048 1 2 1 6 2 0 VGS=-10V VGS=-2.5V VGS=-4.5V CISS COSS CRSS 400 800 1200 1600 0 5 10 15 20 25 0 7 14 21 28 35 VDS=-10V ID=-2.5A 25℃ 125℃ -20℃ 01234 01234 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-2.5V VGS=-1.5V VGS=-1.7V C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) Out put Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance CharacteristicGate charge Characteristics
REV1.1 H-15-4 P-Channel Enhancement Mode Field Effect Transistor PB5B5BX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 57 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 57˚C/W TA=25˚C DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS= -10V 2.TA=25˚C 3.RθJA = 57˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-2.5A 25℃ 125℃ 100 Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature