PB5A2BX NIKOSEM | Alldatasheet

Document overview

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  • PDF pages: 4

Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications.
  • Computer for DC to DC Converters Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current TA = 25 °C ID A TA = 70 °C 9 Pulsed Drain Current1 IDM 33 Power Dissipation TA = 25 °C PD W TA = 70 °C 1.3 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 60 °C／W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe. PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 9mΩ 11A G : GATE D : DRAIN S : SOURCE 100% RG Test , 100% UIL Test

REV1.0 G-39-1 N-Channel Enhancement Mode Field Effect Transistor PB5A2BX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 20 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 0.45 0.65 0.9 Gate-Body Leakage IGSS VDS = 0V, VGS = ±8V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 16V, VGS = 0V 1 VDS = 10V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 11A 6.5 9 mΩ VGS = 2.5V, ID = 9A 7.9 11 VGS = 1.8V, ID = 9A 10.5 15 Forward Transconductance1 gfs VDS = 10V, ID = 18A 93 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1MHz 1547 pF Output Capacitance Coss 227 Reverse Transfer Capacitance Crss 203 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.4 Ω Total Gate Charge2 Qg(VGS=4.5V) VDS = 10V , ID = 11A nC Qg(VGS=2.5V) 13 Gate-Source Charge2 Qgs 1.1 Gate-Drain Charge2 Qgd 7.8 Turn-On Delay Time2 td(on) VDD = 10V ID  11A, VGEN = 4.5V, RG = 6Ω nS Rise Time2 tr 20 Turn-Off Delay Time2 td(off) 62 Fall Time2 tf 45 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 1.5 A Forward Voltage1 VSD IF = 11A, VGS = 0V 1.3 V Reverse Recovery Time trr IF =11A , dlF/dt = 100A / S 9.1 nS Reverse Recovery Charge Qrr 2.2 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV1.0 G-39-1 N-Channel Enhancement Mode Field Effect Transistor PB5A2BX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM CISS COSS CRSS 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=4.5V ID=11A 25℃ 125℃ 0 0.6 1.2 1.8 2.4 3 0.02 0.04 0.06 0.08 0.1 ID=11A 0.003 0.006 0.009 0.012 0.015 0 4 8 12 16 20 VGS=4.5V VGS=2.5V 0 1 2 3 4 5 VGS=4.5V VGS=2.5V VGS=1.8V VGS=1.5V VGS=1.1V VGS=1.3V VGS=1.2V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)

REV1.0 G-39-1 N-Channel Enhancement Mode Field Effect Transistor PB5A2BX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 60 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 60 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 4.5V 2.TC=25˚C 3.RθJC = 60˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 25℃ 150℃ 0.1 100 0.9 1.8 2.7 3.6 4.5 0 5 10 15 20 25 VDS=10V ID=11A Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]