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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low R DS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current TA = 25 °C ID A TA = 70 °C -6.4 Pulsed Drain Current1 I DM 30 Power Dissipation3 TA = 25 °C PD 2.7 W TA = 70 °C 1.7 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 45 °C／W Junction-to-Ambient2 Steady-State RJA 65 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. PRODUCT SUMMARY V(BR)DSS R DS(ON) I D -30V 25m Ω -8A G : GATE D : DRAIN S : SOURCE

REV1.0 F-24-1 P-Channel Enhancement Mode Field Effect Transistor PB555BA PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -30 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = -250A -0.8 -1.7 -2.5 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = -24V, VGS = 0V -1 VDS = -20V, VGS = 0V, TJ = 55 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -10V, ID = -6A 18 25 mΩVGS = -4.5V, ID = -6A 29 40 Forward Transconductance1 g fs V DS = -5V, ID = -6A 22 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = -15V, f = 1MHz 920 pFOutput Capacitance C oss 133 Reverse Transfer Capacitance C rss 115 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 13 Ω Total Gate Charge2 Qg(VGS=-10V) VDS = -15V , ID = -6A nC Qg(VGS=-4.5V) 10 Gate-Source Charge2 Q gs 2 Gate-Drain Charge2 Q gd 5 Turn-On Delay Time2 t d(on) VDD = -15V ID  -6A, VGEN = -10V, RG = 6Ω nS Rise Time2 t r 18 Turn-Off Delay Time2 t d(off) 40 Fall Time2 t f 26 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S -2.7 A Forward Voltage1 V SD I F = -6A, VGS = 0V -1 V Reverse Recovery Time t rr IF = -6A , dlF/dt = 100A / S 11 nS Reverse Recovery Charge Q rr 3.8 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV1.0 F - 2 4 - 1 P-Channel Enhancement Mode Field Effect Transistor PB555BA PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) CRSS 200 400 600 800 1000 1200 0 5 10 15 20 25 30 012345 Out put Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance CharacteristicGate charge Characteristics 25℃ ‐20℃ 125℃ CISS COSS 0.02 0.04 0.06 0.08 0.1 0 4 8 12 16 20 VGS=-10V VGS=-4.5V 0.02 0.04 0.06 0.08 0.1 2468 1 0 ID=-6A 0123456 VGS=-10V VGS=‐9V VGS=‐8V VGS=‐7V VGS=‐6V VGS=‐5V VGS=‐4.5V VGS=‐4V VGS=‐3.5V VGS=-3V 0 4 8 12 16 20 VDS=-15V ID=-6A

REV1.0 F-24-1 P-Channel Enhancement Mode Field Effect Transistor PB555BA PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pu lse Maximum Power Dissipation -ID , Drain Current(A) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) T1 , Square Wave Pulse Duration[sec] -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature Power(W) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-6A DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= -10V 2.TA=25˚C 3.RθJA = 65˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 65˚C/W TA=25˚C 25℃150℃ 0.1 100 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 65 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA