PB544JU

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REV 1.3 F-52-5 Dual N-Channel Enhancement Mode Field Effect Transistor PB544JU TDFN 2x3-6 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±10 V Continuous Drain Current TA = 25 ° C ID 12.9 A TA = 70 ° C 10 Pulsed Drain Current1 I DM 42 Avalanche Current I AS 23 Avalanche Energy3 E AS 26 mJ Power Dissipation TA = 25 ° C PD 2.4 W TA = 70 ° C 1.5 Junction & Storage Temperature Range T J, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 52 °C / W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITSMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 20 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 0.4 0.66 1 Gate-Body Leakage I GSS V DS = 0V, VGS = ±8V ±10 uA Zero Gate Voltage Drain Current I DSS VDS = 16V, VGS = 0V 1 VDS=10V, VGS=0V, TJ=125 ° C 10 1,2:S1 3:G1 4:G2 5,6:S2 7:D1/D2 PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 20V 8 mΩ 12.9A

REV 1.3 F-52-5 Dual N-Channel Enhancement Mode Field Effect Transistor PB544JU TDFN 2x3-6 Halogen-Free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 3A 5.1 6.3 8 mΩ VGS = 3.8V, ID = 3A 5.4 7.2 8.1 VGS = 3.1V, ID = 3A 5.7 7.6 9.5 VGS = 2.5V, ID = 3A 6.3 8.4 10.5 VGS = 1.8V, ID = 3A 7 11 15 Forward Transconductance1 g fs V DS = 5V, ID = 3A 32 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 10V, f = 1MHz 1584 pF Output Capacitance C oss 215 Reverse Transfer Capacitance C rss 164 Total Gate Charge2 Q g VDS = 10V, ID = 3A VGS = 4.5V 18.4 nC Gate-Source Charge2 Q gs 1.8 Gate-Drain Charge2 Q gd 4.4 Turn-On Delay Time2 t d(on) VDD = 10V ID  3A, VGS = 4.5V, RGS = 6Ω nS Rise Time2 t r 42 Turn-Off Delay Time2 t d(off) 60 Fall Time2 t f 25 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 2 A Forward Voltage1 V SD I F = 3A, VGS = 0V 1.2 V Reverse Recovery Time t rr IF = 3A, dlF/dt = 100A / S 20 nS Reverse Recovery Charge Q rr 9 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 1.3 F-52-5 Dual N-Channel Enhancement Mode Field Effect Transistor PB544JU TDFN 2x3-6 Halogen-Free & Lead-Free NIKO-SEM CISS COSS CRSS 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 25 -50 0 50 100 150 VGS=3.8V,ID=3A VGS=4.5V,ID=3A VGS=3.1V,ID=3A VGS=2.5V,ID=3A 0.003 0.006 0.009 0.012 0.015 048 1 2 1 6 2 0 VGS=4.5V VGS=2.5V VGS=3.1V VGS=3.8V 25℃ 125℃ -20℃ 01234 0.01 0.02 0.03 0.04 0.05 ID=3A 012345 VGS=4.5V VGS=3.8V VGS=3.1V VGS=2.5V VGS=1.5V VGS=1.2V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) RDS(ON)ON-Resistance(mOHM) TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)

REV 1.3 F-52-5 Dual N-Channel Enhancement Mode Field Effect Transistor PB544JU TDFN 2x3-6 Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 52˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 52 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 52 ˚C/W TA=25˚C 25℃150℃ 0.1 100 048 1 2 1 6 2 0 VDS=10V ID=3A Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]