PB502CW

PB502CW NIKOSEM | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

Features

• Pb−Free, Halogen Free and RoHS compliant.
• Low RDS(on) to Minimize Conduction Losses.
• Ohmic Region Good RDS(on) Ratio.
• Optimized Gate Charge to Minimize Switching Losses.

Applications

• Protection Circuits Applications.
• Logic/Load Switch Circuits Applications.
• DC Motor for BLDC Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±8 ±8 V Continuous Drain Current TA = 25 °C ID 6 -3.8 A TA = 70 °C 4.8 -3 Pulsed Drain Current1 IDM 20 -15 Power Dissipation3 TA = 25 °C PD 1.9 1.9 W TA = 70 °C 1.2 1.2 Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA N-ch 63 °C / W P-ch 63 Junction-to-Ambient2 Steady-State N-ch 97 P-ch 97 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 20V 30mΩ 6A P-Channel -20V 75mΩ -3.8A 1 : S1. 4 : S2. 2 : G1. 5 : G2. 3 : D2. 6 : D1.

REV 1.0 H-40-2 N- & P-Channel Enhancement Mode Field Effect Transistor PB502CW PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A N-Ch P-Ch -20 V VGS = 0V, ID = -250A Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A N-Ch P-Ch 0.5 -0.3 0.7 -0.6 -1 VDS = VGS, ID = -250A Gate-Body Leakage IGSS VDS = 0V, VGS = ±8V N-Ch P-Ch ±100 ±100 nA VDS = 0V, VGS = ±8V Zero Gate Voltage Drain Current IDSS VDS = 16V, VGS = 0V N-Ch P-Ch 1 VDS = -16V, VGS = 0V VDS = 10V, VGS = 0V, TJ = 55 °C N-Ch P-Ch 10 -10 VDS = -10V, VGS = 0V, TJ = 55 °C Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 5A N-Ch P-Ch 25 mΩ VGS = -4.5V, ID = -2.5A VGS = 2.5V, ID = 4.5A N-Ch P-Ch 29 90 VGS = -2.5V, ID = -2A VGS = 1.8V, ID = 2A N-Ch P-Ch 36 125 VGS = -1.8V, ID = -1A Forward Transconductance1 gfs VDS = 10V, ID = 5A N-Ch P-Ch 26 10 S VDS = -10V, ID = -2.5A DYNAMIC Input Capacitance Ciss N-Channel VGS = 0V, VDS = 10V, f = 1MHz P-Channel VGS = 0V, VDS = -10V, f = 1MHz N-Ch P-Ch 510 588 pF Output Capacitance Coss N-Ch P-Ch Reverse Transfer Capacitance Crss N-Ch P-Ch 67 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz N-Ch P-Ch 1.9 7.4 Ω

REV 1.0 H-40-2 N- & P-Channel Enhancement Mode Field Effect Transistor PB502CW PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM Total Gate Charge2 Qg N-Channel VDS = 10V , VGS = 4.5V, ID = 5A P-Channel VDS = -10V , VGS = -4.5V, ID = -2.5A N-Ch P-Ch 7.3 7.3 nC Gate-Source Charge2 Qgs N-Ch P-Ch 0.6 0.7 Gate-Drain Charge2 Qgd N-Ch P-Ch 2.5 1.9 Turn-On Delay Time2 td(on) N-Channel VDS = 10V, ID  5A, VGS = 4.5V, RGEN = 6Ω P-Channel VDS = -10V, ID  -2.5A, VGS = -4.5V, RGEN = 6Ω N-Ch P-Ch 8.2 nS Rise Time2 tr N-Ch P-Ch Turn-Off Delay Time2 td(off) N-Ch P-Ch Fall Time2 tf N-Ch P-Ch SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS N-Ch P-Ch 1.9 -1.6 A Forward Voltage1 VSD IF = 5A, VGS = 0V N-Ch P-Ch -1.2 V IF = -2.5A, VGS = 0V Reverse Recovery Time trr IF = 5A, dlF/dt = 100A / S IF = -2.5A, dlF/dt = 100A / S N-Ch P-Ch 9 10 nS Reverse Recovery Charge Qrr N-Ch P-Ch 3 3 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature.

REV 1.0 H-40-2 N- & P-Channel Enhancement Mode Field Effect Transistor PB502CW PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain-To-Source Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 VGS=4.5V VGS=2.5V VGS=1.8V VGS=1.4V VGS=1.6V VGS=2V 0.02 0.04 0.06 0.08 0.1 0 4 8 12 16 20 VGS=4.5V VGS=2.5V 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 ID=5A 25℃ 125℃ -20℃ 0 1 2 3 4 CISS COSS CRSS 100 200 300 400 500 600 0 5 10 15 20 25 30 0 2 4 6 8 10 VDS=10V ID=5A TYPICAL PERFORMANCE CHARACTERISTICS N-CHANNEL ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A)

REV 1.0 H-40-2 N- & P-Channel Enhancement Mode Field Effect Transistor PB502CW PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=4.5V ID=5A Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 25℃ 150℃ 0.1 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 97 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 4.5V 2.TA =25˚C 3.RθJA = 97 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 97 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec]

REV 1.0 H-40-2 N- & P-Channel Enhancement Mode Field Effect Transistor PB502CW PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic -VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) On-Resistance VS Drain-To-Source Current -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage Voltage -VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 6 VGS=-4V VGS=-3V VGS=-2.5V VGS=-2V VGS=-1.8V VGS=-1.6V VGS=-1.3V 0.03 0.06 0.09 0.12 0.15 0 3 6 9 12 15 VGS=-4.5V VGS=-2.5V 0.08 0.16 0.24 0.32 0.4 ID=-2.5A 25℃ 125℃ -20℃ 0 1 2 3 4 CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 0 0 2 4 6 8 10 VDS=-10V ID=-2.5A P-CHANNEL -ID, Drain-To-Source Current(A) C , Capacitance(pF) -VGS , Gate-To-Source Voltage(V) RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM)

REV 1.0 H-40-2 N- & P-Channel Enhancement Mode Field Effect Transistor PB502CW PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-4.5V ID=-2.5A 25℃ 125℃ 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 97 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = -4.5V 2.TA =25˚C 3.RθJA = 97 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 97 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA -IS , Source Current(A) -ID , Drain Current(A) Power(W)