PB210BD

PB210BD NIKOSEM | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 4

Technical content

REV 1.0 Aug-19-2009 N-Channel Enhancement Mode Field Effect Transistor PB210BD TO-252 Halogen-Free & Lead-Free NIKO -SEM ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±20 V TC = 25 °C 10 Continuous Drain Current TC = 100 °C ID Pulsed Drain Current 1 IDM 40 Avalanche Current IAs 18 A Avalanche Energy L = 0.1mH E AS 16.5 mJ TC = 25 °C 41 Power Dissipation TC = 100 °C PD W Operating Junction & Storage Temperature Range Tj, T stg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RθJC 3 Junction-to-Ambient RθJA 62.5 °C / W 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, I D = 250 µA 100 Gate Threshold Voltage V GS(th) VDS = V GS , I D = 250 µA 1 1.5 2 V Gate-Body Leakage I GSS V DS = 0V, V GS = ±20V ±100 nA VDS = 80V, V GS = 0V 1 Zero Gate Voltage Drain Current IDSS VDS = 80V, V GS = 0V, T J = 125 °C 10 µA On-State Drain Current 1 I D(ON) V DS = 10V, V GS = 10V 40 A 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) ID 100V 230mΩ 10A G D S

REV 1.0 Aug-19-2009 N-Channel Enhancement Mode Field Effect Transistor PB210BD TO-252 Halogen-Free & Lead-Free NIKO -SEM VGS = 10V, I D = 6A 191 230 Drain-Source On-State Resistance

1 RDS(ON)

VGS = 5V, I D = 6A 203 240 mΩ Forward Transconductance 1 g fs V DS = 10V, I D = 6A 10 S DYNAMIC Input Capacitance C iss 802 1002 Output Capacitance C oss 80 100 Reverse Transfer Capacitance Crss VGS = 0V, V DS = 25V, f = 1MHz 41 51 pF Gate Resistance Rg V GS = 0V, V DS = 0V, f = 1MHz 2.5 3.1 Ω Total Gate Charge 2 Q g 15 Gate-Source Charge 2 Q gs 2 Gate-Drain Charge 2 Q gd VDS =50V, V GS = 10V, ID = 6A 4 nC Turn-On Delay Time 2 t d(on) 16 Rise Time 2 t r V DD = 50V, 330 Turn-Off Delay Time 2 t d(off) ID ≅ 6A, V GS = 10V, R GS = 6Ω 39 Fall Time 2 t f 111 nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T J = 25 °C) Continuous Current I S 10 A Forward Voltage 1 V SD I F = 6A, V GS = 0V 1.4 V Reverse Recovery Time t rr 75 nS Reverse Recovery Charge Q rr IF = 6A, dI/dt=500A/µs 0.17 nC 1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. 2Independent of operating temperature.

REV 1.0 Aug-19-2009 N-Channel Enhancement Mode Field Effect Transistor PB210BD TO-252 Halogen-Free & Lead-Free NIKO -SEM Source-Drain Diode Forward Voltage VGS =2.5V VGS =3.5V 0 1 2 3 4 5 25 ℃℃ ℃℃ 125 ℃℃ ℃℃ -20 ℃℃ ℃℃ 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V 0 3 6 9 12 15 18 ID =6A VDS =50V Ciss Coss Crss 0.00E+00 2.00E+02 4.00E+02 6.00E+02 8.00E+02 1.00E+03 0 5 10 15 20 25 30 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 RDS(ON) ╳╳ ╳╳ VGS =10V ID =6A RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E+02 1.0E+03 1.4 TJ =25° C TJ =150° C Output Characteristics ID , Drain-To-Source Current(A) Transfer Characteristics ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature RDS(ON) ON-Resistance(OHM) TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge VGS , Gate-To-Source Voltage(V) VSD , Source-To-Drain Voltage(V) IS , Source Current(A)

REV 1.0 Aug-19-2009 N-Channel Enhancement Mode Field Effect Transistor PB210BD TO-252 Halogen-Free & Lead-Free NIKO -SEM single Pluse Duty Cycle=0.5 0.2 0.1 0.05 0.02 0.01 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01 VDS, Drain-To-Source Voltage(V) Note 1.Duty cycle, D= t1 / t2 2.R thJC = 3 ℃℃ ℃℃/W 3.T J-TC = P*R thJC(t) 4.R thJC(t) = r(t)*R thJC 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 SINGLE PULSE R θJC = 3 ˚˚ ˚˚C/W TC =25 ˚˚ ˚˚C 1ms 100us DC 100ms 10ms 0.1 100 1 10 100 1000 NOTE : 1.V GS = 10V 2.T C =25 ˚˚ ˚˚C 3.R θJC = 3 ˚˚ ˚˚C/W 4.Single Pulse Operation in This Area is Limited by R DS(ON) ↓↓ ↓↓ Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]