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Dual N-Channel Enhancement Mode Field Effect Transistor PA910HV SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 100V 190mΩ 1.7A ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Continuous Drain Current TA = 25 ° C ID 1.7 A TA = 70 ° C 1.4 Pulsed Drain Current1 I DM 12 Avalanche Current I AS 2 Avalanche Energy L = 1mH E AS 2.1 mJ Power Dissipation TA = 25 ° C PD 1.25 W TA = 70 ° C 0.8 Junction & Storage Temperature Range T J, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 90 ° C / W Junction-to-Case RJC 30 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. .ELECTRICAL CHARACTERISTICS (T J = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.3 1.88 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 80V, VGS = 0V 1 A VDS = 80V, VGS = 0V, TJ = 70 ° C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 1.7A 153 205 mΩVGS =10V, ID = 1.7A 143 190 G: GATE D: DRAIN S: SOURCE G D S
Dual N-Channel Enhancement Mode Field Effect Transistor PA910HV SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Forward Transconductance1 g fs V DS = 5V, ID = 1.7A 11 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz 304 pFOutput Capacitance C oss 31 Reverse Transfer Capacitance C rss 20 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 2.2 Ω Total Gate Charge2 Q g(VGS=10V) VDS = 50V , ID =1.7A 8.1 nC Qg(VGS=4.5V) 5 Gate-Source Charge2 Q gs 0.9 Gate-Drain Charge2 Q gd 3.1 Turn-On Delay Time2 t d(on) VDS = 50V , ID 1.7A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 23 Turn-Off Delay Time2 t d(off) 15 Fall Time2 t f 22 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current I S 1.2 A Forward Voltage1 V SD I F = 1.7A, VGS = 0V 1.4 V Diode Reverse Recovery Time t rr IF= 1.7A, dI/dt=100A/μs 17 nS Diode Reverse Recovery Charge Q rr 8.7 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
Dual N-Channel Enhancement Mode Field Effect Transistor PA910HV SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.4V VGS=3.2V VGS=3V VGS=2.8V 0.2 0.4 0.6 0.8 0369 1 2 VGS=10V VGS=4.5V 0.2 0.4 0.6 0.8 2468 1 0 ID=1.7A 25℃ 125℃ -20℃ 012345 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=1.7A CISS COSS CRSS 100 150 200 250 300 350 400 0 5 10 15 20 25 30
Dual N-Channel Enhancement Mode Field Effect Transistor PA910HV SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 90˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pu lse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 02468 1 0 VDS=50V ID=1.7A 25℃ 150℃ 0.1 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 90˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 90 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA