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REV1.0 H-11-3 N-Channel Enhancement Mode Field Effect Transistor PA910BC SOT-89 Halogen-Free & Lead-Free NIKO-SEM 1: GATE 2: DRAIN 3: SOURCE 321 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V GS ±20 V Continuous Drain Current TA = 25 °C ID 2.9 A TA = 70 °C 2.3 Pulsed Drain Current1 I DM 8 Power Dissipation3 TA = 25 °C PD 3.9 W TA = 70°C 2.5 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 32 °C/W Junction-to-Ambient2 Steady-State RJA 60 Junction-to-Case RJc 7.8 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.3 1.9 2.3 PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 100V 190mΩ 2.9A G D S
REV1.0 H-11-3 N-Channel Enhancement Mode Field Effect Transistor PA910BC SOT-89 Halogen-Free & Lead-Free NIKO-SEM Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 80V, VGS = 0V 1 VDS = 80V, VGS = 0V, TJ = 100 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 1.6A 148 190 mΩ VGS = 4.5V, ID = 1.6A 159 205 Forward Transconductance1 g fs V DS = 5V, ID = 1.6A 7 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz 301 pFOutput Capacitance C oss 29 Reverse Transfer Capacitance C rss 19 Gate Resistance Rg V GS = 0V, VDS = 0V, f = 1MHz 2.3 Ω Total Gate Charge2 Q g VDS = 50V , VGS =10V, ID = 1.6A 8.1 nCGate-Source Charge2 Q gs 0.9 Gate-Drain Charge2 Q gd 3.1 Turn-On Delay Time2 t d(on) 6 nS Rise Time2 t r V DD = 50V, 23 Turn-Off Delay Time2 t d(off) ID 1.6A, VGEN = 10V, RGS = 6Ω 15 Fall Time2 t f 22 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 0.9 A Forward Voltage1 V SD I F = 1.6A, VGS = 0V 1.4 V Reverse Recovery Time t rr IF = 1.6A, dlF/dt = 100A / S 17.8 nS Reverse Recovery Charge Qrr 8.8 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature
REV1.0 H-11-3 N-Channel Enhancement Mode Field Effect Transistor PA910BC SOT-89 Halogen-Free & Lead-Free NIKO-SEM 0.2 0.4 0.6 0.8 2468 1 0 ID=1.6A 25℃ 125℃ -20℃ 012345 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0.06 0.12 0.18 0.24 0.3 01234567 VGS=10V VGS=4.5V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=1.6A CISS COSS CRSS 100 150 200 250 300 350 0 5 10 15 20 25 30 012345 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V VGS=2.9V VGS=2.7V
REV1.0 H-11-3 N-Channel Enhancement Mode Field Effect Transistor PA910BC SOT-89 Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 60˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 60˚C/W TA=25˚C Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 02468 1 0 VDS=50V ID=1.6A 25℃ 125℃ 0.1 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 60 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA