PA710ED NIKOSEM | Alldatasheet
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P-Channel Logic Level Enhancement Mode Field Effect Transistor PA710ED TO-252 Halogen-Free & Lead-Free NIKO-SEM I-48-5 REV 1.0 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -100V 170mΩ -12A G S D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±25 V Continuous Drain Current TC = 25 °C ID -12 A TC = 100 °C -7.9 Pulsed Drain Current1 IDM -50 Avalanche Current IAS -11.4 Avalanche Energy L = 1mH EAS 64.9 mJ Power Dissipation TC = 25 °C PD 59 W TC = 100 °C 23 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJc 2.1 °C / W 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1.3 -1.9 -2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -80V, VGS = 0V -1 VDS = -80V, VGS = 0V, TJ = 55 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -5A 160 190 mΩ VGS = -10V, ID = -5A 147 170 Forward Transconductance1 gfs VDS = -5V, ID = -5A 16 S 1. GATE 2. DRAIN 3. SOURCE
P-Channel Logic Level Enhancement Mode Field Effect Transistor PA710ED TO-252 Halogen-Free & Lead-Free NIKO-SEM I-48-5 REV 1.0 DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -25V, f = 1MHz 1565 pF Output Capacitance Coss 95 Reverse Transfer Capacitance Crss 60 Gate Resistance Rg VGS =0V, VDS = 0V, f = 1MHz 3.7 Ω Total Gate Charge2 Qg VDS = -50 , VGS = -10V, ID =-5A nC Gate-Source Charge2 Qgs 4 Gate-Drain Charge2 Qgd 6.8 Turn-On Delay Time2 td(on) 17 nS Rise Time2 tr VDS = -50V , 23 Turn-Off Delay Time2 td(off) ID -5A, VGS = -10V, RGEN =6Ω 61 Fall Time2 tf 47 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -12 A Forward Voltage1 VSD IF = -5A, VGS = 0V -1.2 V Reverse Recovery Time trr IF = -5A, dlF/dt = 100A / S 45 nS Reverse Recovery Charge Qrr 91 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
P-Channel Logic Level Enhancement Mode Field Effect Transistor PA710ED TO-252 Halogen-Free & Lead-Free NIKO-SEM I-48-5 REV 1.0 Transfer Characteristics -ID, Drain-To-Source Current(A) Output Characteristics -VDS, Drain-To-Source Voltage(V) -VGS, Gate-To-Source Voltage(V) -VGS , Gate-To-Source Voltage(V) Gate charge Characteristics Characteristics C , Capacitance(pF) Capacitance Characteristic Qg , Total Gate Charge(nC) -VDS, Drain-To-Source Voltage(V) RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) On-Resistance VS Gate-To-Source Voltage -ID , Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) 0 2 4 6 8 10 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-3.3V VGS=-3V 25℃ 125℃ -20℃ 0 1 2 3 4 5 0.06 0.12 0.18 0.24 0.3 0 4 8 12 16 20 VGS=-10V VGS=-4.5V 0.1 0.2 0.3 0.4 0.5 2 4 6 8 10 ID=-5A 0 6 12 18 24 30 VDS=-50V ID=-5A CISS COSS CRSS 400 800 1200 1600 2000 0 5 10 15 20 25 30 -ID, Drain-To-Source Current(A)
P-Channel Logic Level Enhancement Mode Field Effect Transistor PA710ED TO-252 Halogen-Free & Lead-Free NIKO-SEM I-48-5 REV 1.0 On-Resistance VS Temperature Source-Drain Diode Forward Voltage Normalized Drain to Source ON-Resistance -IS , Source Current(A) -VSD, Source-To-Drain Voltage(V) TJ , Junction Temperature(˚C) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) -VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(sec) 25℃ 125℃ 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-5A 200 400 600 800 1000 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.1 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.1 100 1 10 100 NOTE : 1.VGS = -10V 2.TC =25˚C 3.RθJC = 2.1 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.1 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC Power(W) Transient Thermal Response Curve