PA5D8EA NIKOSEM | Alldatasheet

Document overview

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Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • ESD Protection − HBM Class : 1C.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications.
  • Space Limit & Smart Devices Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±10 V Continuous Drain Current2 TA = 25 °C ID 0.96 A TA = 70 °C 0.76 Pulsed Drain Current1,2 IDM 3 A Power Dissipation TA = 25 °C PD 0.49 W TA = 70 °C 0.31 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 251 °C / W 1Limited by maximum junction temperature. 2Limited by package. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 20 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 0.4 0.7 1 V(BR)DSS RDS(ON) ID 20V 300mΩ 0.96A

REV 1.2 I-27-1 N-Channel Enhancement Mode Field Effect Transistor PA5D8EA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM Gate-Body Leakage IGSS VDS = 0V, VGS = ±8V ±30 A Zero Gate Voltage Drain Current IDSS VDS = 16V, VGS = 0V 1 VDS = 10V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 0.5A 144 300 mΩ VGS = 2.5V, ID = 0.25A 186 400 VGS = 1.8V, ID = 0.2A 250 700 Forward Transconductance1 gfs VDS = 5V, ID = 0.5A 2.5 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1MHz pF Output Capacitance Coss 24 Reverse Transfer Capacitance Crss 11 Total Gate Charge2 Qg VGS = 4.5V , VDS = 20V, ID = 1A 1.1 nC Gate-Source Charge2 Qgs 0.2 Gate-Drain Charge2 Qgd 0.3 Turn-On Delay Time2 td(on) VDD = 10V , ID  0.5A , VGS = 4.5V, RGEN = 5.1Ω nS Rise Time2 tr 36 Turn-Off Delay Time2 td(off) 86 Fall Time2 tf 173 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 0.25 A Forward Voltage1 VSD IF = 0.5A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 1A, dI/dt = 100 A/μs 111 nS Reverse Recovery Charge Qrr 102 uC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 1.2 I-27-1 N-Channel Enhancement Mode Field Effect Transistor PA5D8EA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM 0.1 0.2 0.3 0.4 0.5 ID=0.5A VGS=1.8V 0.1 0.2 0.3 0.4 0.5 0 0.6 1.2 1.8 2.4 3 VGS=4.5V VGS=2.5V 0.6 1.2 1.8 2.4 0 0.4 0.8 1.2 1.6 2 VGS=4.5V VGS=1.8V VGS=1.6V VGS=1.4V VGS=2.5V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0.6 1.2 1.8 2.4 0 0.6 1.2 1.8 2.4 3 CISS COSS CRSS 0 5 10 15 20 25 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=4.5V ID=0.5A

REV 1.2 I-27-1 N-Channel Enhancement Mode Field Effect Transistor PA5D8EA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.01 0.1 0.1 1 10 100 NOTE : 1.VGS= 4.5V 2.TA=25˚C 3.RθJA = 251˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 25℃ 150℃ 0.1 Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 0.9 1.8 2.7 3.6 4.5 VDS=20V ID=1A 0.7 1.4 2.1 2.8 3.5 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 251 ˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 251 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA