PA597BA NIKOSEM | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±12 V Continuous Drain Current TA = 25 °C ID -5.3 A TA = 70 °C -4.3 Pulsed Drain Current1 IDM -16 Power Dissipation3 TA = 25 °C PD 1.4 W TA = 70 °C 0.9 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 90 °C/W Junction-to-Ambient2 Steady-State RJA 130 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. 3The Power dissipation is based on RJA t ≦10s value. G: GATE D: DRAIN S: SOURCE
REV 1.0 G-52-3 P-Channel Enhancement Mode Field Effect Transistor PA597BA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -20 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -0.7 -0.8 -1.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±12V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0V -1 VDS = -10V, VGS = 0V, TJ = 55 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -2.5V, ID = -3.5A 40 58 mΩ VGS = -4.5V, ID = -3.5A 30 43 VGS = -10V, ID = -3.5A 25 30 Forward Transconductance1 gfs VDS = -5V, ID = -3.5A 16 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -10V, f = 1MHz 801 pF Output Capacitance Coss 115 Reverse Transfer Capacitance Crss 92 Total Gate Charge2 Qg(VGS=4.5V) VDS = -10V , VGS =-4.5V, ID = -3.5A 8.7 nC Qg(VGS=2.5V) 5.4 Gate-Source Charge2 Qgs 1.2 Gate-Drain Charge2 Qgd 2.6 Turn-On Delay Time2 td(on) VDD = -10V, VGS = -4.5V ID -3.5A, RG = 6Ω nS Rise Time2 tr 30 Turn-Off Delay Time2 td(off) 55 Fall Time2 tf 20 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -1 A Forward Voltage1 VSD IF = -3.5A, VGS = 0V -1.3 V Reverse Recovery Time trr IF = -3.5A, dlF/dt = 100A / S 24 nS Reverse Recovery Charge Qrr 6 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.0 G-52-3 P-Channel Enhancement Mode Field Effect Transistor PA597BA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM 0.02 0.04 0.06 0.08 0.1 0 3 6 9 12 15 VGS=-10V VGS=-2.5V VGS=-4.5V C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic Gate charge Characteristics Characteristics CRSS 100 200 300 400 500 600 700 800 900 0 5 10 15 20 0.02 0.04 0.06 0.08 0.1 0 2 4 6 8 10 ID=-3.5A 0 1 2 3 4 5 25℃ -20℃ 125℃ 0 1 2 3 4 5 VGS=-10V VGS=-7V VGS=-4.5V VGS=-2.5V VGS=-1.6V VGS=-1.8V VGS=-1.9V VGS=-2V CISS COSS 0.9 1.8 2.7 3.6 4.5 0 2 4 6 8 10 VDS=-10V ID=-3.5A
REV 1.0 G-52-3 P-Channel Enhancement Mode Field Effect Transistor PA597BA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 4.5V 2.TA=25˚C 3.RθJA = 130˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature T1 , Square Wave Pulse Duration[sec] Power(W) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-4.5V ID=-3.5A 25℃ 150℃ 0.1 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 130˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 130 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA