PA520BA NIKOSEM | Alldatasheet

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REV 0.91 D-06-5 N-Channel Enhancement Mode Field Effect Transistor PA520BA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±20 V Continuous Drain Curren TA = 25 ° C ID 6.3 A TA = 70 ° C 4.7 Pulsed Drain Current1 IDM 30 Avalanche Current IAS 17 Avalanche Energy L = 0.1mH EAS 15 mJ Power Dissipation TA = 25 ° C PD 1.2 W TA = 70 ° C 0.8 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ° C THERMAL RESISTANCE RATING THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 40 ° C / W Junction-to-Ambient2 RJA 98 1Pulse width limited by maximum junction temperature. 2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1 1.4 2.5 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 125 ° C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 6.3A 15.3 20 mΩ VGS = 4.5V, ID = 6.3A 18.2 25 Forward Transconductance1 gfs VDS = 5V, ID = 6.3A 41 S G: GATE D: DRAIN S: SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 20mΩ 6.3A G D S

REV 0.91 D-06-5 N-Channel Enhancement Mode Field Effect Transistor PA520BA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 496 pF Output Capacitance Coss 81 Reverse Transfer Capacitance Crss 73 Total Gate Charge2 Qg(VGS=10V) VDS =15V, ID = 6.3A 14.4 nC Qg(VGS=4.5V) 8 Gate-Source Charge2 Qgs 1.6 Gate-Drain Charge2 Qgd 3.9 Turn-On Delay Time2 td(on) VDD = 15V, ID  6.3A, VGS = 10V, RGEN = 6Ω nS Rise Time2 tr 10 Turn-Off Delay Time2 td(off) 27 Fall Time2 tf 10 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current2 IS 6.3 A Forward Voltage1 VSD IF = 6.3A, VGS = 0V 1 V Reverse Recovery Time trr IF = 6.3A, dlF/dt = 100A / S VGS = 0V 10.7 nS Reverse Recovery Charge Qrr 2.6 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 0.91 D-06-5 N-Channel Enhancement Mode Field Effect Transistor PA520BA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=6A 0.02 0.04 0.06 0.08 0.1 0 4 8 12 16 20 VGS=10V VGS=4.5V VGS=3V 0 1 2 3 4 5 6 VGS =10V VGS =7V VGS =4.5V VGS =3.5V VGS=3V VGS=2.5V VGS=2V 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=6.3A CISS COSS CRSS 100 200 300 400 500 600 0 5 10 15 20 25 30

REV 0.91 D-06-5 N-Channel Enhancement Mode Field Effect Transistor PA520BA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 98 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0 3 6 9 12 15 VDS=15V ID=6.3A 25℃ 150℃ 0.1 DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 98˚C/W 4.Single Pulse Operation in This Area 0.001 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 98˚C/W TA=25˚C