PA500CA NIKOSEM | Alldatasheet

Document overview

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Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minim ize Switching Losses.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current TA = 25 °C ID 3.4 -2.3 A TA = 70 °C 2.7 -1.8 Pulsed Drain Current1 IDM 10 -8 Power Dissipation3 TA = 25 °C PD 1.3 1 W TA = 70 °C 0.8 0.7 Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL N-Channel P-Channel UNITS Junction-to-Ambient2 t ≦10s RJA 93 114 °C / W Steady-State 163 188 1 Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. G : GATE D : DRAIN S : SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 30V 60mΩ 3.4A P-Channel -30V 120mΩ -2.3A

REV 1.0 I-13-5 N- & P-Channel Enhancement Mode Field Effect Transistor PA500CA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A N-Ch P-Ch -30 V VGS = 0V, ID = -250A Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A N-Ch P-Ch 1.5 -1.45 2.5 -2.5 VDS = VGS, ID = -250A Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V N-Ch P-Ch ±100 ±100 nA VDS = 0V, VGS = ±20V Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V N-Ch P-Ch 1 VDS = -24V, VGS = 0V VDS=10V, VGS=0V, TJ=125 °C N-Ch P-Ch 10 -10 VDS=-10V, VGS=0V, TJ=125 °C Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 2A N-Ch P-Ch 66 124 100 180 mΩ VGS = -4.5V, ID = -1.5A VGS = 10V, ID = 3.4A N-Ch P-Ch 43 120 VGS = -10V, ID = -2.3A Forward Transconductance1 gfs VDS = 5V, ID = 3.4A N-Ch P-Ch 6 4.3 S VDS = -5V, ID = -2.3A DYNAMIC Input Capacitance Ciss N-Channel VGS = 0V, VDS = 15V, f = 1MHz P-Channel VGS = 0V, VDS = -15V, f = 1MHz N-Ch P-Ch 211 193 pF Output Capacitance Coss N-Ch P-Ch 40 Reverse Transfer Capacitance Crss N-Ch P-Ch 27 Total Gate Charge2 Qg N-Channel VDS = 10V, VGS = 10V, ID = 3.4A P-Channel VDS =-10V, VGS = -10V, ID = -2.3A N-Ch P-Ch 5.3 nC Gate-Source Charge2 Qgs N-Ch P-Ch 0.8 0.5 Gate-Drain Charge2 Qgd N-Ch P-Ch 1.5 1.3

REV 1.0 I-13-5 N- & P-Channel Enhancement Mode Field Effect Transistor PA500CA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM Turn-On Delay Time2 td(on) N-Channel VDS = 15V ID  3.4A, VGS = 10V, RGEN = 6Ω P-Channel VDS = -15V, ID  -2.3A,VGS = -10V,RGEN = 6Ω N-Ch P-Ch 4.2 3.8 nS Rise Time2 tr N-Ch P-Ch 37 Turn-Off Delay Time2 td(off) N-Ch P-Ch 14 Fall Time2 tf N-Ch P-Ch 10 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS N-Ch P-Ch 1 -0.8 A Forward Voltage1 VSD IF = 3.4A, VGS = 0V N-Ch P-Ch 1.3 -1.3 V IF = -2.3A, VGS = 0V Reverse Recovery Time trr N- Channel IF = 3.4A, dlF/dt = 100A / S P-Channel IF = -2.3A, dlF/dt = 100A / S N-Ch P-Ch 11 7.2 nS Reverse Recovery Charge Qrr N-Ch P-Ch 3.5 2.5 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature.

REV 1.0 I-13-5 N- & P-Channel Enhancement Mode Field Effect Transistor PA500CA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=3.5V VGS=2.5V VGS=3V 0.03 0.06 0.09 0.12 0.15 2 4 6 8 10 ID=3.4A 25℃ 125℃ -20℃ 0 1 2 3 4 5 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=3.4A CISS COSS CRSS 100 150 200 250 300 0 5 10 15 20 25 30 0.03 0.06 0.09 0.12 0.15 0 1 2 3 4 5 VGS=10V VGS=4.5V N-CHANNEL

REV 1.0 I-13-5 N- & P-Channel Enhancement Mode Field Effect Transistor PA500CA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] Power(W) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) 0 1.5 3 4.5 6 VDS=10V ID=3.4A 0.1 25℃ 150℃ single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 163 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 163 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 163 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)

REV 1.0 I-13-5 N- & P-Channel Enhancement Mode Field Effect Transistor PA500CA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM C , Capacitance(pF) Transfer Characteristics Output Characteristics Capacitance Characteristic -VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) On-Resistance VS Temperature On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 6 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-2.7V VGS=-2.5V VGS=-2V 0.04 0.08 0.12 0.16 0.2 0 1 2 3 4 5 VGS=-10V VGS=-4.5V 0.04 0.08 0.12 0.16 0.2 2 4 6 8 10 ID=-2.3A 25℃ 125℃ 0 1 2 3 4 5 -20℃ 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-2.3A CISS COSS CRSS 100 150 200 250 0 5 10 15 20 25 30 P-CHANNEL -ID, Drain-To-Source Current(A) -ID, Drain-To-Source Current(A) -VDS, Drain-To-Source Voltage(V) -VGS, Gate-To-Source Voltage(V)

REV 1.0 I-13-5 N- & P-Channel Enhancement Mode Field Effect Transistor PA500CA SOT-23-6 Halogen-Free & Lead-Free NIKO-SEM Source-Drain Diode Forward Voltage -IS , Source Current(A) -VSD, Source-To-Drain Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) -VGS , Gate-To-Source Voltage(V) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] Power(W) 0 1.5 3 4.5 6 VDS=-10V ID=-2.3A 25℃ 150℃ DC 100ms 10ms 1ms 0.01 0.1 0.1 1 10 100 NOTE : 1.VGS = -10V 2.TA =25˚C 3.RθJA = 188 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 188 ˚C/W TA = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 188 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA