PA410BTF NIKOSEM | Alldatasheet
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REV 1.0 D-37-2 N-Channel Enhancement Mode Field Effect Transistor PA410BTF TO-220F Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 6 Pulsed Drain Current1 IDM 30 Avalanche Current IAS 9.8 Avalanche Energy L = 0.1mH EAS 4.8 mJ Power Dissipation TC = 25 °C PD 29 W TC = 100 °C 11 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 4.2 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 80V , VGS = 0V 1 A VDS = 80V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 5A 105 170 mΩ VGS = 10V , ID = 5A 95 140 Forward Transconductance1 gfs VDS = 10V, ID = 5A 13 S 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 140mΩ 10A G D S 2 31
REV 1.0 D-37-2 N-Channel Enhancement Mode Field Effect Transistor PA410BTF TO-220F Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 333 pF Output Capacitance Coss 59 Reverse Transfer Capacitance Crss 26 Total Gate Charge2 Qg VGS = 10V， VDS = 50V, ID = 5A nC Gate-Source Charge2 Qgs 1.1 Gate-Drain Charge2 Qgd 4 Turn-On Delay Time2 td(on) VDS = 50V ID 5A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 60 Turn-Off Delay Time2 td(off) 30 Fall Time2 tf 40 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 10 A Forward Voltage1 VSD IF = 5A, VGS = 0V 1.1 V Reverse Recovery Time trr IF = 5A, dlF/dt = 100A / S 29 nS Reverse Recovery Charge Qrr 33 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.0 D-37-2 N-Channel Enhancement Mode Field Effect Transistor PA410BTF TO-220F Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3V 0.4 0.8 1.2 1.6 2.0 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=5A CISS COSS CRSS 100 150 200 250 300 350 400 450 0 5 10 15 20 25 30 0 2 4 6 8 10 VDS=50V ID=5A 25℃ 150℃ 0.1 100 Normalized Drain to Source ON-Resistance C , Capacitance(pF)
REV 1.0 D-37-2 N-Channel Enhancement Mode Field Effect Transistor PA410BTF TO-220F Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 4.2 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC DC 100ms 10ms 1ms 0.1 100 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 4.2 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 120 150 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 4.2 ˚C/W TC=25˚C ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) T1 , Square Wave Pulse Duration[sec]