PA102FDG NIKOSEM | Alldatasheet
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P-Channel Logic Level Enhancement Mode Field Effect Transistor PA102FDG T O - 2 5 2 Lead-Free NIKO-SEM NOV-05-2004 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±12 V TC = 25 °C -10 Continuous Drain Current TC = 70 °C ID -6.2 Pulsed Drain Current1 I DM -24 A TC = 25 °C 25 Power Dissipation TC = 70 °C PD 9.6 W Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RθJC 5 Junction-to-Ambient RθJA 110 °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = -250µA -20 Gate Threshold Voltage V GS(th) VDS = VGS, ID = -250µA -0.45 -0.8 -1.2 V Gate-Body Leakage I GSS V DS = 0V, VGS = ±12V ±100 nA VDS = -16V, VGS = 0V -1 Zero Gate Voltage Drain Current I DSS VDS = -13.2V, VGS = 0V, TJ = 125 °C -10 µA On-State Drain Current1 I D(ON) V DS = -5V, VGS = -4.5V -24 A VGS = -2.5V, ID =-2A 124 180Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -3A 93 115 mƸ Forward Transconductance1 g fs V DS = -5V, ID = -3A 4.4 S 1 :GATE 2 :DRAIN 3 :SOURCE PRODUCT SUMMARY V (BR)DSS R DS(ON) I D -20 115mƸ -10A G S D
P-Channel Logic Level Enhancement Mode Field Effect Transistor PA102FDG T O - 2 5 2 Lead-Free NIKO-SEM NOV-05-2004 DYNAMIC Input Capacitance C iss 430 Output Capacitance C oss 235 Reverse Transfer Capacitance C rss VGS = 0V, VDS = -6V, f = 1MHz pF Total Gate Charge2 Q g 7.6 10 Gate-Source Charge2 Q gs 3.2 Gate-Drain Charge2 Q gd VDS = 0.5V(BR)DSS, VGS = -4.5V, ID = -3A 2 nC Turn-On Delay Time2 t d(on) 25 Rise Time2 t r V DD = -10V 60 Turn-Off Delay Time2 t d(off) ID ≅ -1A, VGS = -5V, RG = 6Ƹ 70 Fall Time2 t f 60 nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current I S -10 Pulsed Current3 I SM -24 A Forward Voltage1 V SD I F = -10A, VGS = 0V -1.2 V 1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2Ĉ. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH PA102FDG, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
P-Channel Logic Level Enhancement Mode Field Effect Transistor PA102FDG T O - 2 5 2 Lead-Free NIKO-SEM NOV-05-2004 Body Diode Forward Voltage Variation with Source Current and Temperature T = 125° C -V - Body Diode Forward Voltage(V) 0.6 -Is - Reverse Drain Current(A) 0.0001 0.001 0.01 SD 0.2 0.4 25° C V = 0V 0.1 GS A 0.8 1.0 -55° C 1.2
P-Channel Logic Level Enhancement Mode Field Effect Transistor PA102FDG T O - 2 5 2 Lead-Free NIKO-SEM NOV-05-2004
P-Channel Logic Level Enhancement Mode Field Effect Transistor PA102FDG T O - 2 5 2 Lead-Free NIKO-SEM NOV-05-2004 TO-252 (DPAK) MECHANICAL DATA mm mm Dimension Min. Typ. Max. Dimension Min. Typ. Max. A 9.35 10.4 H 0.89 2.03 B 2.2 2.4 I 6.35 6.80 C 0.45 0.6 J 5.2 5.5 D 0.89 1.5 K 0.6 1 E 0.45 0.69 L 0.5 0.9 G 5.2 6.2 N G A H J I B C M L K D E F 13 2