P9006EVA NIKOSEM | Alldatasheet
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P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 I-37-2 P9006EVA SOP-8 Halogen-free & Lead-Free NIKO-SEM G S D 100% UIS Tested 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±25 V Continuous Drain Current3 TA = 25 °C ID -3.6 A TA = 70 °C -2.9 Pulsed Drain Current1 IDM -20 Avalanche Current IAS -17.2 Avalanche Energy L = 0.1mH EAS 14.7 mJ Power Dissipation3 TA = 25 °C PD 2.4 W TA = 70 °C 1.5 Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RθJA 52 °C / W Junction-to-Ambient2 Steady-State RθJA 86 1Pulse width limited by maximum junction temperature. 2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. G : GATE D : DRAIN S : SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 90mΩ -3.6A
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 I-37-2 P9006EVA SOP-8 Halogen-free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1.3 -1.8 -2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -48V, VGS = 0V -1 VDS = -40V, VGS = 0V, TJ = 55 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -10V, ID = -3.6A 80 90 mΩ VGS = -4.5V, ID = -3.6A 111 135 Forward Transconductance1 gfs VDS = -5V, ID = -3.6A 7 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -25V, f = 1MHz 539 pF Output Capacitance Coss 60 Reverse Transfer Capacitance Crss 41 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 9.1 Ω Total Gate Charge2 Qg(VGS=-10V) VDS = -30V , ID = -3.6A 11.6 nC Qg(VGS=-4.5V) 6.3 Gate-Source Charge2 Qgs 1.5 Gate-Drain Charge2 Qgd 3.4 Turn-On Delay Time2 td(on) VDD = -30V, ID -3.6A , VGS = -10V, RGEN = 6Ω nS Rise Time2 tr 32 Turn-Off Delay Time2 td(off) 50 Fall Time2 tf 58 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -2.4 A Forward Voltage1 VSD IF = -3.6A, VGS = 0V -1 V Reverse Recovery Time trr IF=-3.6A, dI/dt=100A/μs 17 nS Reverse Recovery Charge Qrr 14 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 I-37-2 P9006EVA SOP-8 Halogen-free & Lead-Free NIKO-SEM C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) 25℃ 125℃ -20℃ 0 2 4 6 8 0 1 2 3 4 5 6 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-3.6V VGS=-3.3V VGS=-3.1V 0.04 0.08 0.12 0.16 0.2 0 3 6 9 12 15 VGS=-10V VGS=-4.5V 0.06 0.12 0.18 0.24 0.3 2 4 6 8 10 ID=-3.6A CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 0 3 6 9 12 VDS=-30V ID=-3.6A Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic Gate charge Characteristics Characteristics
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 I-37-2 P9006EVA SOP-8 Halogen-free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-3.6A single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 91 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 25℃ 125℃ 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 86 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = -10V 2.TA =25˚C 3.RθJC = 86 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Power(W) r(t) , Normalized Effective Transient Thermal Resistance