P8806BM NIKOSEM | Alldatasheet
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REV 1.0 H-36-5 N-Channel Enhancement Mode Field Effect Transistor P8806BM SOT-23 Halogen-Free & Lead-Free NIKO-SEM G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 70 °C 1.6 Pulsed Drain Current1 IDM 11 Power Dissipation TA = 25 °C PD 0.78 W TA = 70 °C 0.5 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 159 °C / W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.9 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 48V, VGS = 0V 1 VDS = 40V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS =4.5V, ID = 2A 71 108 mΩ VGS = 10V, ID = 2 A 59 88 G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 88mΩ 2A
REV 1.0 H-36-5 N-Channel Enhancement Mode Field Effect Transistor P8806BM SOT-23 Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 gfs VDS = 5V, ID = 2A 10 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 286 pF Output Capacitance Coss 38 Reverse Transfer Capacitance Crss 28 Total Gate Charge2 Qg VDS = 30V , VGS = 10V, ID = 2A 8.5 nC Gate-Source Charge2 Qgs 0.8 Gate-Drain Charge2 Qgd 3.3 Turn-On Delay Time2 td(on) 8.3 nS Rise Time2 tr VDS = 30V , 10 Turn-Off Delay Time2 td(off) ID 2A, VGS = 10V, RGEN =6Ω 20 Fall Time2 tf 4.5 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 0.6 A Forward Voltage1 VSD IF = 2A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 2A, dlF/dt = 100A / S 18 nS Reverse Recovery Charge Qrr 10 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.0 H-36-5 N-Channel Enhancement Mode Field Effect Transistor P8806BM SOT-23 Halogen-Free & Lead-Free NIKO-SEM 0.1 0.2 0.3 0.4 0.5 2 4 6 8 10 ID=2A Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V VGS=3.2V 0.03 0.06 0.09 0.12 0 3 6 9 12 VGS=10V VGS=4.5V CISS COSS CRSS 100 150 200 250 300 350 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=2A
REV 1.0 H-36-5 N-Channel Enhancement Mode Field Effect Transistor P8806BM SOT-23 Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 0 2 4 6 8 10 VDS=30V ID=2A 25℃ 150℃ 0.1 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 159 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 159 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 159 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA