P8515HDB NIKOSEM | Alldatasheet
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REV1.0 I-52-3 N-Channel Enhancement Mode Field Effect Transistor P8515HDB TO-252 Halogen-Free & Lead-Free NIKO-SEM G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 12.7 Pulsed Drain Current1 IDM 60 Avalanche Current IAS 11 Avalanche Energy L = 1mH EAS 60 mJ Power Dissipation TC = 25 °C PD 83 W TC = 100 °C 33 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1.5 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 150 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1 1.9 3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 85mΩ 20A 1. GATE 2. DRAIN 3. SOURCE
REV1.0 I-52-3 N-Channel Enhancement Mode Field Effect Transistor P8515HDB TO-252 Halogen-Free & Lead-Free NIKO-SEM Zero Gate Voltage Drain Current IDSS VDS = 150V, VGS = 0V 1 VDS = 100V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 10A 88 110 mΩ VGS = 10V, ID = 10A 69 85 Forward Transconductance1 gfs VDS = 5V, ID = 10A 16 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 763 pF Output Capacitance Coss 167 Reverse Transfer Capacitance Crss 21 Gate Resistance Rg VGS =0V, VDS = 0V, f = 1MHz 4.7 Ω Total Gate Charge2 Qg (VGS=10V) VDS = 75V , VGS = 10V, ID = 10A nC Qg(VGS=4.5V) 13 Gate-Source Charge2 Qgs 2.6 Gate-Drain Charge2 Qgd 9 Turn-On Delay Time2 td(on) VDS = 75V , ID 10A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 33 Turn-Off Delay Time2 td(off) 48 Fall Time2 tf 55 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 20 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1 V Reverse Recovery Time trr IF = 10A, dlF/dt = 100A / S 85 nS Reverse Recovery Charge Qrr 279 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature
REV1.0 I-52-3 N-Channel Enhancement Mode Field Effect Transistor P8515HDB TO-252 Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 7 0.0 0.6 1.2 1.8 2.4 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=10A CISS COSS CRSS 400 800 1200 1600 0 30 60 90 120 150 180 0.04 0.08 0.12 0.16 0.2 0 6 12 18 24 30 VGS=10V VGS=4.5V 0.04 0.08 0.12 0.16 0.2 0 2 4 6 8 10 ID=10A 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.3V VGS=3.7V
REV1.0 I-52-3 N-Channel Enhancement Mode Field Effect Transistor P8515HDB TO-252 Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 0 5 10 15 20 25 VDS=75V ID=10A 0.1 100 125℃ 25℃ 400 800 1200 1600 2000 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.5 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.1 100 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 1.5 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)