P8010HK NIKOSEM | Alldatasheet
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Halogen-Free & Lead-Free REV 1.0 I-11-4 Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM D1 D1 D2 D2 S1 G1 S2 G2#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 7.2 Pulsed Drain Current1 IDM 40 Continuous Drain Current TA = 25 °C ID 2.9 TA = 70 °C 2.3 Avalanche Current IAS 8.8 Avalanche Energy L = 1mH EAS 38.7 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 10 Power Dissipation TA = 25 °C PD 1.7 W TA = 70 °C 1 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 73 °C / W Junction-to-Case RJC 4.8 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 85mΩ 11A
Halogen-Free & Lead-Free REV 1.0 I-11-4 Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.75 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V 1 VDS = 80V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 10A 69 95 mΩ VGS = 10V, ID = 11A 63 85 Forward Transconductance1 gfs VDS = 5V, ID = 11A 30 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 548 pF Output Capacitance Coss 80 Reverse Transfer Capacitance Crss 28 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.5 Ω Total Gate Charge2 Qg VGS = 10V VDS = 50V , VGS = 10V, ID = 11A 11.7 nC VGS = 4.5V 6.8 Gate-Source Charge2 Qgs 1.6 Gate-Drain Charge2 Qgd 4 Turn-On Delay Time2 td(on) VDS = 50V , ID 11A, VGS = 10V, RGEN =6Ω 10.8 nS Rise Time2 tr 46 Turn-Off Delay Time2 td(off) 22 Fall Time2 tf 108 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 11 A Forward Voltage1 VSD IF = 11A, VGS = 0V 1.1 V Reverse Recovery Time trr IF = 11A, dlF/dt = 100A / S 28 nS Reverse Recovery Charge Qrr 36 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
Halogen-Free & Lead-Free REV 1.0 I-11-4 Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.4V VGS=2.6V VGS=3V 0.04 0.08 0.12 0.16 0.2 0 2 4 6 8 10 12 VGS=10V 0.04 0.08 0.12 0.16 0.2 2 4 6 8 10 ID=11A 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=11A CISS COSS CRSS 100 200 300 400 500 600 700 800 0 20 40 60 80 100 120
Halogen-Free & Lead-Free REV 1.0 I-11-4 Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 0 3 6 9 12 VDS=50V ID=11A 0.1 100 25℃ 150℃ 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 73 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 1000 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 73 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 73 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA