P8010BI NIKOSEM | Alldatasheet
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REV1.0 E-48-4 N-Channel Enhancement Mode Field Effect Transistor P8010BI TO-251 Halogen-Free & Lead-Free NIKO-SEM 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 9 Pulsed Drain Current1 IDM 35 Avalanche Current IAS 12 Avalanche Energy L = 0.1mH EAS 7.2 mJ Power Dissipation TC = 25 °C PD 46 W TC = 100 °C 18 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 2.7 °C / W 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V 1 A VDS = 80V, VGS = 0V, TJ = 125 °C 10 On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V 35 A Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 10A 67 95 mΩ VGS = 10V , ID = 15A 61 85 Forward Transconductance1 gfs VDS = 5V, ID = 15A 25 S 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 85mΩ 15A G D S
REV1.0 E-48-4 N-Channel Enhancement Mode Field Effect Transistor P8010BI TO-251 Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 527 pF Output Capacitance Coss 68 Reverse Transfer Capacitance Crss 37 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.5 Ω Total Gate Charge2 Qg VGS = 10 V， VDS = 0.5V(BR)DSS, ID = 15A 18.5 nC Gate-Source Charge2 Qgs 2.7 Gate-Drain Charge2 Qgd 5.1 Turn-On Delay Time2 td(on) 11 nS Rise Time2 tr VDS = 40V 48 Turn-Off Delay Time2 td(off) ID 15A, VGS = 10V, RGEN =6Ω 80 Fall Time2 tf 73 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 15 A Forward Voltage1 VSD IF = 15A, VGS = 0V 1.1 V Reverse Recovery Time trr IF = 15A, dlF/dt = 100A / S 33 nS Reverse Recovery Charge Qrr 35 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.0 E-48-4 N-Channel Enhancement Mode Field Effect Transistor P8010BI TO-251 Halogen-Free & Lead-Free NIKO-SEM VGS, Gate-To-Source Voltage(V) Capacitance Characteristic Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=7V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 0 4 8 12 16 20 VDS=50V ID=15A 25℃ 150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=15A Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) IS , Source Current(A)
REV1.0 E-48-4 N-Channel Enhancement Mode Field Effect Transistor P8010BI TO-251 Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Transient Thermal Response Curve DC 100ms 10ms 1ms 0.1 100 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 2.7˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 120 180 240 300 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.7˚C/W TC=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.7 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]