P8008BVA NIKOSEM | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor P8008BVA SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ±25 V Continuous Drain Current TA = 25 °C ID 3.5 A TA = 70 °C 2.8 Pulsed Drain Current1 IDM 14 Avalanche Current IAS 14.7 Avalanche Energy L = 0.1mH EAS 10.8 mJ Power Dissipation TA = 25 °C PD 1.8 W TA = 70 °C 1.1 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 69 °C / W Junction-to-Lead RJL 25 °C / W 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 80 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 64V, VGS = 0V 1 VDS = 64V, VGS = 0V, TJ = 70 °C 10 G : GATE D : DRAIN S : SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80V 68mΩ 3.5A
N-Channel Enhancement Mode Field Effect Transistor P8008BVA SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 1A 47 78 mΩ VGS = 10V, ID = 3A 44 68 Forward Transconductance1 gfs VDS = 10V, ID = 3A 17 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 562 pF Output Capacitance Coss 63 Reverse Transfer Capacitance Crss 38 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.2 Ω Total Gate Charge2 (10V) Qg VDS = 80V, VGS = 10V, ID = 3A nC Total Gate Charge2 (4.5V) Qg 8 Gate-Source Charge2 Qgs 2 Gate-Drain Charge2 Qgd 4.5 Turn-On Delay Time2 td(on) VDS = 40V, ID 3A, VGS = 10V, RG = 6Ω nS Rise Time2 tr 14 Turn-Off Delay Time2 td(off) 38 Fall Time2 tf 17 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Current IS 1.4 A Forward Voltage1 VSD IF = 3A, VGS = 0V 1.3 V Reverse Recovery Time trr IF = 3A , dlF/dt = 100A / S 17 nS Reverse Recovery Charge Qrr 10 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature.
N-Channel Enhancement Mode Field Effect Transistor P8008BVA SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 25℃ 150℃ 0.1 100 0 3 6 9 12 15 VDS=40V ID=3A CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=3A 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance C , Capacitance(pF)
N-Channel Enhancement Mode Field Effect Transistor P8008BVA SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 69 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 69 ˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 69 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Safe Operating Area Single Pulse Maximum Power Dissipation Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V)