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REV1.0 H-26-1 N-Channel Enhancement Mode Field Effect Transistor P5515BD TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 150 V Gate-Source Voltage V GS ±20 V Continuous Drain Current TC = 25 °C ID 24.6 A TC = 100 °C 15.5 Pulsed Drain Current1 I DM 60 Avalanche Current I AS 11.6 Avalanche Energy L = 1mH E AS 67.9 mJ Power Dissipation TC = 25 °C PD 83 W TC = 100 °C 33 Junction & Storage Temperature Range T J, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1.5 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 150 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.3 1.9 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 120V, VGS = 0V 1 AVDS = 100V, VGS = 0V, TJ = 125 °C 10 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 150V 55mΩ 24.6A G D S
REV1.0 H-26-1 N-Channel Enhancement Mode Field Effect Transistor P5515BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 10A 43 65 mΩ VGS = 10V , ID = 15A 42 55 Forward Transconductance1 g fs V DS = 5V, ID = 10A 76 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz 2049 pFOutput Capacitance C oss 184 Reverse Transfer Capacitance C rss 81 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 1 Ω Total Gate Charge2 Q g VGS = 10 V， V DS = 75V , ID = 15A nCGate-Source Charge2 Q gs 6.4 Gate-Drain Charge2 Q gd 10.9 Turn-On Delay Time2 t d(on) VDS = 75V ID 15A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 18 Turn-Off Delay Time2 t d(off) 68 Fall Time2 t f 45 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 24.6 A Forward Voltage1 V SD I F = 15A, VGS = 0V 1 V Reverse Recovery Time t rr IF = 15A, dlF/dt = 100A / S 60 nS Reverse Recovery Charge Q rr 118 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.0 H-26-1 N-Channel Enhancement Mode Field Effect Transistor P5515BD TO-252 Halogen-Free & Lead-Free NIKO-SEM 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=15A CISS COSS CRSS 500 1000 1500 2000 2500 0 5 10 15 20 25 30 0.05 0.1 0.15 0.2 0.25 0.3 2468 1 0 ID=15A 0.02 0.04 0.06 0.08 0.1 0 6 12 18 24 30 VGS=10V VGS=4.5V 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V VGS=2.8V 25℃ 125℃ -20℃ 012345 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)
REV1.0 H-26-1 N-Channel Enhancement Mode Field Effect Transistor P5515BD TO-252 Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 200 400 600 800 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.5 ˚C/W TC=25˚C DC 100ms 10ms 1ms 0.1 100 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 1.5˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 25℃ 150℃ 0.1 100 0 9 18 27 36 45 VDS=75V ID=15A Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]