P5510BD NIKOSEM | Alldatasheet
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REV1.0 I-46-4 N-Channel Enhancement Mode Field Effect Transistor P5510BD TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID 20.5 A TC = 100 °C 13 Pulsed Drain Current1 IDM 75 Avalanche Current IAS 4.9 Avalanche Energy L = 1mH EAS 12 mJ Power Dissipation TC = 25 °C PD 56 W TC = 100 °C 22 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 2.2 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V 1 A VDS = 80V, VGS = 0V, TJ = 125 °C 10 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 55mΩ 20.5A G D S
REV1.0 I-46-4 N-Channel Enhancement Mode Field Effect Transistor P5510BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 10A 37 55 mΩ VGS = 4.5V , ID = 10A 39 65 Forward Transconductance1 gfs VDS = 5V, ID = 10A 54 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 1215 pF Output Capacitance Coss 98 Reverse Transfer Capacitance Crss 58 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 0.73 Ω Total Gate Charge2 Qg VGS = 10 V， VDS = 50V , ID = 10A nC Gate-Source Charge2 Qgs 3.1 Gate-Drain Charge2 Qgd 7.2 Turn-On Delay Time2 td(on) VDS = 50V ID 10A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 30 Turn-Off Delay Time2 td(off) 42 Fall Time2 tf 71 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 20.5 A Forward Voltage1 VSD IF = 10A, VGS = 0V 1 V Reverse Recovery Time trr IF = 10A, dlF/dt = 100A / S 29 nS Reverse Recovery Charge Qrr 30 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.0 I-46-4 N-Channel Enhancement Mode Field Effect Transistor P5510BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.9V VGS=2.7V VGS=2.5V 0.02 0.04 0.06 0.08 0.1 0 6 12 18 24 30 VGS=10V VGS=4.5V 0.04 0.08 0.12 0.16 0.2 2 4 6 8 10 ID=10A 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=10A CISS COSS CRSS 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30
REV1.0 I-46-4 N-Channel Enhancement Mode Field Effect Transistor P5510BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(sec) 0 6 12 18 24 30 VDS=50V ID=10A 25℃ 150℃ 0.1 100 DC 100ms 10ms 1ms 0.1 100 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 2.2 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 100 200 300 400 500 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.2 ˚C/W TC = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.2 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC