P5506NV NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
REV1.0 I-37-4 N- & P-Channel Enhancement Mode Field Effect Transistor P5506NV SOP-8 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS -60 60 V Gate-Source Voltage VGS ±25 ±20 V Continuous Drain Current TA = 25 °C ID -3.3 4 A TA = 100 °C -2.7 3.2 Pulsed Drain Current1 IDM -20 20 Avalanche Current IAS -17 14 Avalanche Energy L = 0.1mH EAS 14 9.8 mJ Power Dissipation TA = 25 °C PD 2 2.1 W TA = 100 °C 1.3 1.3 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient t ≦10s RJA Q2 61 °C / W Q1 60 Junction-to-Ambient Steady-State RJA Q2 102 Q1 101 1Pulse width limited by maximum junction temperature. PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 -60V 95mΩ -3.3A Q1 60V 55mΩ 4A G. GATE D. DRAIN S. SOURCE
REV1.0 I-37-4 N- & P-Channel Enhancement Mode Field Effect Transistor P5506NV SOP-8 Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A Q2 -60 V VGS = 0V, ID = 250A Q1 60 Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A Q2 -1.3 -1.8 -2.3 VDS = VGS, ID = 250A Q1 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V Q2 ±100 nA VDS = 0V, VGS = ±20V Q1 ±100 Zero Gate Voltage Drain Current IDSS VDS = -48V, VGS = 0V Q2 -1 VDS = 48V, VGS = 0V Q1 1 VDS = -40V, VGS = 0V, TJ = 55 °C Q2 -10 VDS = 40V, VGS = 0V, TJ = 55 °C Q1 10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -3.4A Q2 115 135 mΩ VGS = 4.5V, ID = 4A Q1 54 72 VGS = -10V, ID = -3.4A Q2 82 95 VGS = 10V, ID = 4A Q1 46 55 Forward Transconductance1 gfs VDS = -5V, ID = -3.4A Q2 10 S VDS = 5V, ID = 4A Q1 21 DYNAMIC Input Capacitance Ciss Q2 VGS = 0V, VDS = -25V, f = 1MHz VGS = 0V, VDS = 25V, f = 1MHz Q2 545 pF Q1 389 Output Capacitance Coss Q2 76 Q1 55 Reverse Transfer Capacitance Crss Q2 49 Q1 38 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Q2 8.9 Ω Q1 1.7 Total Gate Charge2 Qg VGS = 10V VDS = -30V , VGS = -10V, ID = -3.4A VDS = 30V , VGS = 10V, ID =4A Q2 12 nC Q1 11 VGS = 4.5V Q2 6.7 Q1 6.1 Gate-Source Charge2 Qgs Q2 1.6 Q1 1.3 Gate-Drain Charge2 Qgd Q2 3.9 Q1 3.9
REV1.0 I-37-4 N- & P-Channel Enhancement Mode Field Effect Transistor P5506NV SOP-8 Halogen-Free & Lead-Free NIKO-SEM Turn-On Delay Time2 td(on) Q2 , VDS = -30V , ID -3.4A, VGS = -10V, RGEN =6Ω Q1 , VDS = 30V , ID 4A, VGS = 10V, RGEN =6Ω Q2 12 nS Q1 11 Rise Time2 tr Q2 33 Q1 49 Turn-Off Delay Time2 td(off) Q2 50 Q1 22 Fall Time2 tf Q2 53 Q1 83 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS Q2 -2 A Q1 1.8 Forward Voltage1 VSD IF = -3.4A, VGS = 0V Q2 -1 V IF = 4A, VGS = 0V Q1 1.2 Reverse Recovery Time trr Q2 IF = -3.4A, dlF/dt = 100A / S IF = 4A, dlF/dt = 100A / S Q2 17 nS Q1 17 Reverse Recovery Charge Qrr Q2 15 nC Q1 11 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.0 I-37-4 N- & P-Channel Enhancement Mode Field Effect Transistor P5506NV SOP-8 Halogen-Free & Lead-Free NIKO-SEM 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.7V VGS=3.3V VGS=2.7V Output Characteristics Transfer Characteristics RDS(ON)ON-Resistance(OHM) Normalized Drain to Source ON-Resistance ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) On-Resistance VS Drain Current On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) On-Resistance VS Temperature Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) 0.02 0.04 0.06 0.08 0.1 0 4 8 12 16 20 VGS=10V VGS=4.5V 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=4A 0.0 0.6 1.2 1.8 2.4 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=4A CISS COSS CRSS 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 30 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 7 Typical performance characteristics N-channel
REV1.0 I-37-4 N- & P-Channel Enhancement Mode Field Effect Transistor P5506NV SOP-8 Halogen-Free & Lead-Free NIKO-SEM VGS , Gate-To-Source Voltage(V) Gate charge Characteristics Characteristics Source-Drain Diode Forward Voltage IS , Source Current(A) Qg , Total Gate Charge(nC) VSD, Source-To-Drain Voltage(V) Single Pulse Maximum Power Dissipation Safe Operating Area ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 0 3 6 9 12 VDS=30V ID=4A single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 101 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 101 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 101 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.1 100 25℃ 125℃
REV1.0 I-37-4 N- & P-Channel Enhancement Mode Field Effect Transistor P5506NV SOP-8 Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics -ID, Drain-To-Source Current(A) -ID, Drain-To-Source Current(A) -VDS, Drain-To-Source Voltage(V) -VGS, Gate-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) C , Capacitance(pF) -ID , Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) On-Resistance VS Temperature Capacitance Characteristic Normalized Drain to Source ON-Resistance -VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) 0 1 2 3 4 5 6 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-3.5V VGS=-3V 0.06 0.12 0.18 0.24 0.3 0 4 8 12 16 20 VGS=-10V VGS=-4.5V 0.06 0.12 0.18 0.24 0.3 2 4 6 8 10 ID=-3.4A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-3.4A CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 25℃ -20℃ 0 1 2 3 4 5 125℃ Typical performance characteristics P-channel
REV1.0 I-37-4 N- & P-Channel Enhancement Mode Field Effect Transistor P5506NV SOP-8 Halogen-Free & Lead-Free NIKO-SEM -VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage Gate charge Characteristics Characteristics -IS , Source Current(A) Qg , Total Gate Charge(nC) -VSD, Source-To-Drain Voltage(V) Single Pulse Maximum Power Dissipation Safe Operating Area -ID , Drain Current(A) Power(W) -VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 0 3 6 9 12 VDS=-30V ID=-3.4A single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 102 ℃/W 3.TJ-TA= P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 102 ˚C/W TA = 25˚C 100 125℃ 25℃ DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 102 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)