P5506HVA NIKOSEM | Alldatasheet
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Dual N-Channel Enhancement Mode Field Effect Transistor P5506HVA SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TA = 25 ° C ID A TA = 70 ° C 3.2 Pulsed Drain Current1 IDM 16 Avalanche Current IAS 14.5 Avalanche Energy L = 0.1mH EAS 10.6 mJ Power Dissipation3 TA = 25 ° C PD 2 W TA = 70 ° C 1.28 Junction & Storage Temperature Range TJ, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient t ≦10s RJA 62.5 ° C / W Junction-to-Ambient Steady-State RJA 110 Junction-to-Case Steady-State RJC 60 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RJA t ≦10s value. .ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.75 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 55mΩ 4A G: GATE D: DRAIN S: SOURCE
Dual N-Channel Enhancement Mode Field Effect Transistor P5506HVA SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.1 Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V 1 A VDS = 48V, VGS = 0V, TJ = 55 ° C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 3A 50 72 mΩ VGS =10V, ID = 3A 42 55 Forward Transconductance1 gfs VDS = 5V, ID = 3A 13 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 385 pF Output Capacitance Coss 55 Reverse Transfer Capacitance Crss 39 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 30V , ID = 3A nC Qg(VGS=4.5V) 6.3 Gate-Source Charge2 Qgs 1.2 Gate-Drain Charge2 Qgd 3.9 Turn-On Delay Time2 td(on) VDS = 30V , ID 3A, VGS = 10V, RGEN =6Ω 9.9 nS Rise Time2 tr 16 Turn-Off Delay Time2 td(off) 23 Fall Time2 tf 12 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current IS 0.9 A Forward Voltage1 VSD IF = 3A, VGS = 0V 1.2 V Diode Reverse Recovery Time trr IF= 3A, dI/dt=100A/μs 16 nS Diode Reverse Recovery Charge Qrr 6 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
Dual N-Channel Enhancement Mode Field Effect Transistor P5506HVA SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.1 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.9V VGS=3.3V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0 1 2 3 4 5 0.02 0.04 0.06 0.08 0.1 0 4 8 12 16 VGS=10V VGS=4.5V 0.1 0.2 0.3 0.4 0.5 2 4 6 8 10 ID=3A CISS COSS CRSS 100 200 300 400 500 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=3A
Dual N-Channel Enhancement Mode Field Effect Transistor P5506HVA SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.1 25℃ 150℃ 0.1 100 Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 0 3 6 9 12 VDS=30V ID=3A 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 110˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 110˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 110 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA