P5506BVA NIKOSEM | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor P5506BVA SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TA = 25 °C ID 4.5 A TA = 70 °C 3.6 Pulsed Drain Current1 IDM 16 Avalanche Current IAS 14 Avalanche Energy L = 0.1mH EAS 9.8 mJ Power Dissipation3 TA = 25 °C PD 2.5 W TA = 70 °C 1.6 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient t ≦10s RJA 50 °C / W Junction-to-Ambient2 Steady-State RJA 86 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.75 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 48V, VGS = 0V 1 A VDS = 40V, VGS = 0V, TJ = 125 °C 10 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 55mΩ 4.5A G: GATE D: DRAIN S: SOURCE G D S
N-Channel Enhancement Mode Field Effect Transistor P5506BVA SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.1 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 3A 49 72 mΩ VGS =10V, ID = 3A 41 55 Forward Transconductance1 gfs VDS = 5V, ID = 3A 13 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 381 pF Output Capacitance Coss 53 Reverse Transfer Capacitance Crss 37 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.7 Ω Total Gate Charge2 Qg VDS = 30V , VGS = 10V, ID = 3A 10.3 nC Gate-Source Charge2 Qgs 1.1 Gate-Drain Charge2 Qgd 3.5 Turn-On Delay Time2 td(on) VDS = 30V , ID 3A, VGS = 10V, RGEN =6Ω 9.6 nS Rise Time2 tr 14 Turn-Off Delay Time2 td(off) 22 Fall Time2 tf 12 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 1.1 A Forward Voltage1 VSD IF = 3A, VGS = 0V 1.2 V Diode Reverse Recovery Time trr IF = 3A, dI/dt=100A/μs 15.7 nS Diode Reverse Recovery Charge Qrr 5.8 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
N-Channel Enhancement Mode Field Effect Transistor P5506BVA SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.1 On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3V 0.02 0.04 0.06 0.08 0.1 0 4 8 12 16 VGS=10V VGS=4.5V 0.06 0.12 0.18 0.24 0.3 2 4 6 8 10 ID=3A CISS COSS CRSS 100 150 200 250 300 350 400 450 0 5 10 15 20 25 30 0 3 6 9 12 VDS=30V ID=3A
N-Channel Enhancement Mode Field Effect Transistor P5506BVA SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.1 DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 86˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(s) VSD, Source-To-Drain Voltage(V) 25℃ 150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=3A 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 86˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 86 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA