P5506BDA NIKOSEM | Alldatasheet
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REV1.0 H-24-5 N-Channel Enhancement Mode Field Effect Transistor P5506BDA TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 9.5 Pulsed Drain Current1 IDM 30 Avalanche Current IAS 14.7 Avalanche Energy L = 0.1mH EAS 10.8 mJ Power Dissipation TC = 25 °C PD 27 W TC = 100 °C 11 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 4.5 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.75 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 48V, VGS = 0V 1 VDS = 40V, VGS = 0V, TJ = 125 °C 10 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 55mΩ 15A G D S
REV1.0 H-24-5 N-Channel Enhancement Mode Field Effect Transistor P5506BDA TO-252 Halogen-Free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 8A 49 72 mΩ VGS = 10V, ID = 10A 43 55 Forward Transconductance1 gfs VDS = 5V, ID = 10A 20 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 376 pF Output Capacitance Coss 54 Reverse Transfer Capacitance Crss 37 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.6 Ω Total Gate Charge2 Qg VGS = 10V VDS = 30V , VGS = 10V , ID = 10A nC VGS = 4.5V 6 Gate-Source Charge2 Qgs 1.2 Gate-Drain Charge2 Qgd 3.9 Turn-On Delay Time2 td(on) VDS = 30V ID 10A, VGS = 10V, RGEN =6Ω 9.5 nS Rise Time2 tr 36 Turn-Off Delay Time2 td(off) 21 Fall Time2 tf 60 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 15 A Forward Voltage1 VSD IF = 10A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 10A, dlF/dt = 100A / S 18 nS Reverse Recovery Charge Qrr 7 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.0 H-24-5 N-Channel Enhancement Mode Field Effect Transistor P5506BDA TO-252 Halogen-Free & Lead-Free NIKO-SEM ID, Drain-To-Source Current(A) Output Characteristics VGS, Gate-To-Source Voltage(V) VGS , Gate-To-Source Voltage(V) Gate charge Characteristics Characteristics C , Capacitance(pF) Capacitance Characteristic Qg , Total Gate Charge(nC) VDS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) CISS COSS CRSS 100 150 200 250 300 350 400 450 0 5 10 15 20 25 30 0 3 6 9 12 VDS=30V ID=10A 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3V 0.02 0.04 0.06 0.08 0.1 0 3 6 9 12 15 18 VGS=10V VGS=4.5V 0.06 0.12 0.18 0.24 0.3 2 4 6 8 10 ID=10A Transfer Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V)
REV1.0 H-24-5 N-Channel Enhancement Mode Field Effect Transistor P5506BDA TO-252 Halogen-Free & Lead-Free NIKO-SEM On-Resistance VS Temperature Source-Drain Diode Forward Voltage IS , Source Current(A) Normalized Drain to Source ON-Resistance VSD, Source-To-Drain Voltage(V) TJ , Junction Temperature(˚C) Safe Operating Area r(t) , Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve T1 , Square Wave Pulse Duration(s) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=10A 25℃ 150℃ 0.1 100 120 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 4.5 ˚C/W TC=25˚C DC 100ms 10ms 1ms 0.1 100 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 4.5 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 4.5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) VDS, Drain-To-Source Voltage(V) Single Pulse Time(s)