P4860VU NIKOSEM | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor P4860VU TO-247 Halogen-Free & Lead-Free NIKO-SEM REV1.0 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current TC = 25 ° C ID A TC = 100 ° C 30 Pulsed Drain Current1 IDM 220 Avalanche Current IAS 10 Avalanche Energy L = 40mH EAS 2000 mJ Power Dissipation TC = 25 ° C PD 431 W TC = 100 ° C 172 Junction & Storage Temperature Range TJ, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 50 ° C / W Junction-to-Case RJC 0.3 1Pulse width limited by maximum junction temperature. .ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 600 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.5 3.4 4.5 Gate-Body Leakage IGSS VDS = 0V, VGS = ±30V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V 1 A VDS = 480V, VGS = 0V, TJ = 125 ° C 10 Drain-Source On-State Resistance1 RDS(ON) VGS =10V, ID = 24A 65 78 mΩ PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 78mΩ 48A 1: GATE 2: DRAIN 3: SOURCE G D S
N-Channel Enhancement Mode Field Effect Transistor P4860VU TO-247 Halogen-Free & Lead-Free NIKO-SEM REV1.0 Forward Transconductance1 gfs VDS = 10V, ID = 24A 42 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 100V, f = 250KHz 4816 pF Output Capacitance Coss 255 Reverse Transfer Capacitance Crss 13 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1 Ω Total Gate Charge2 Qg VGS = 10V , VDS = 480V , ID =24A 151 nC Gate-Source Charge2 Qgs 26 Gate-Drain Charge2 Qgd 60 Turn-On Delay Time2 td(on) VDS = 300V , ID 15A, VGS = 10V, RGEN =25Ω nS Rise Time2 tr 70 Turn-Off Delay Time2 td(off) 158 Fall Time2 tf 96 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current IS 48 A Forward Voltage1 VSD IF = 48A, VGS = 0V 1.25 V Diode Reverse Recovery Time trr IF= 10A, dI/dt=100A/μs 399 nS Diode Reverse Recovery Charge Qrr 6.9 uC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
N-Channel Enhancement Mode Field Effect Transistor P4860VU TO-247 Halogen-Free & Lead-Free NIKO-SEM REV1.0 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5.3V VGS=5.5V VGS=5V 0.05 0.1 0.15 0.2 0.25 2 4 6 8 10 ID=24A CISS COSS CRSS 5000 10000 15000 20000 25000 0 100 200 300 400 500 600 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=24A 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 7 0.02 0.04 0.06 0.08 0.1 0 8 16 24 32 40 48 VGS=10V
N-Channel Enhancement Mode Field Effect Transistor P4860VU TO-247 Halogen-Free & Lead-Free NIKO-SEM REV1.0 Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 0 32 64 96 128 160 VDS=480V ID=24A 25℃ 150℃ 0.1 100 1000 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 0.3 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC DC 100ms 10ms 1ms 0.1 100 1000 1 10 100 1000 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 0.3 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 2000 4000 6000 8000 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 0.3 ˚C/W TC = 25˚C