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N-Channel Enhancement Mode Field Effect Transistor P3710BV SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 0.91 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Continuous Drain Current TA = 25 °C ID 5.2 A TA = 70 °C 4.2 Pulsed Drain Current1 I DM 40 Avalanche Current I AS 16 Avalanche Energy L = 1mH E AS 128 mJ Power Dissipation TA = 25 °C PD 2.3 W TA = 70 °C 1.5 Junction & Storage Temperature Range T J, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 53 °C / W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. .ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1 2 3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 80V, VGS = 0V 1 A VDS = 80V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 5A 33 48 mΩVGS =10V, ID = 5A 26 37 Forward Transconductance1 g fs V DS = 5V, ID = 5A 30 S PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 100V 37mΩ 5.2A G: GATE D: DRAIN S: SOURCE G D S

N-Channel Enhancement Mode Field Effect Transistor P3710BV SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 0.91 DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz 990 pFOutput Capacitance C oss 120 Reverse Transfer Capacitance C rss 60 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 1 Ω Total Gate Charge2 Q g VDS = 50V , VGS = 10V, ID =5A nCGate-Source Charge2 Q gs 4.3 Gate-Drain Charge2 Q gd 8.9 Turn-On Delay Time2 t d(on) VDS = 50V , ID  5A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 20 Turn-Off Delay Time2 t d(off) 37 Fall Time2 t f 27 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 5.2 A Forward Voltage1 V SD I F = 5A, VGS = 0V 1.2 V Diode Reverse Recovery Time t rr IF=5A, dI/dt=100A/μs 31 nS Diode Reverse Recovery Charge Q rr 32 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature.

N-Channel Enhancement Mode Field Effect Transistor P3710BV SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 0.91 0 6 12 18 24 30 VDS=50V ID=5A CISS COSS CRSS 200 400 600 800 1000 1200 0 5 10 15 20 25 30 25℃150℃ 0.1 100 Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 25℃ 125℃ -20℃ 0123456 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=5A 012345 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3.5V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) IS , Source Current(A)

N-Channel Enhancement Mode Field Effect Transistor P3710BV SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 0.91 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 53 ˚C/W TC=25˚C Safe Operating Area Single Pu lse Maximum Power Dissipation Transient Thermal Response Curve DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 53 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 53 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]