P3710BD

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REV 0.91 C-33-2 N-Channel Enhancement Mode Field Effect Transistor P3710BD TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 16 Pulsed Drain Current1 I DM 75 Avalanche Current2 I AS 16 Avalanche Energy2 E AS 128 mJ Power Dissipation TC = 25 °C PD 50 W TC = 100 °C 20 Junction & Storage Temperature Range T J, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 2.5 °C / W 1Pulse width limited by maximum junction temperature. 2Starting Tj =25 °C,L=1mH,VDD=50V ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1 2 3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 80V, VGS = 0V 1 VDS=80V, VGS=0V, TJ=125 °C 10 Drain-Source On-State Resistance1 RDS(ON) V GS = 4.5V, ID = 10A 35 48 mΩ RDS(ON) V GS = 10V, ID = 10A 28 37 mΩ Forward Transconductance1 g fs V DS = 10V, ID = 10A 23 S 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 100V 37mΩ 25A G D S

REV 0.91 C-33-2 N-Channel Enhancement Mode Field Effect Transistor P3710BD TO-252 Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz 996 pF Output Capacitance C oss 127 Reverse Transfer Capacitance C rss 53 Total Gate Charge2 Q g VDS = 50V, ID = 10A VGS = 10V nC Gate-Source Charge2 Q gs 3.9 Gate-Drain Charge2 Q gd 8 Turn-On Delay Time2 t d(on) 29 nS Rise Time2 t r V DD = 50V 2 Turn-Off Delay Time2 t d(off) ID  10A, VGS = 10V, RGS = 6Ω 39 Fall Time2 t f 15 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 25 A Forward Voltage1 V SD I F = 10A, VGS = 0V 1.2 V Reverse Recovery Time t rr IF = 10A, dlF/dt = 100A / S 36 nS Reverse Recovery Charge Q rr 52 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 0.91 C-33-2 N-Channel Enhancement Mode Field Effect Transistor P3710BD TO-252 Halogen-Free & Lead-Free NIKO-SEM 0 5 10 15 20 25 VDS=50V ID=10A 25℃ 150℃ 0.1 100 TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 25℃ 125℃ -20℃ 01234567 012345 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4V VGS=4.5V VGS=3.5V CISS COSS CRSS0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=10A Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance C , Capacitance(pF) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) IS , Source Current(A)

REV 0.91 C-33-2 N-Channel Enhancement Mode Field Effect Transistor P3710BD TO-252 Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.1 100 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 2.5˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Safe Operating Area Single Pulse Maximum Power Dissipation Transient Thermal Response Curve 120 180 240 300 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.5˚C/W TC=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]