P3606NEA NIKOSEM | Alldatasheet
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REV1.0 L-34-3 N- & P-Channel Enhancement Mode Field Effect Transistor P3606NEA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM G. GATE D. DRAIN S. SOURCE D1 D1 D2 D2 S1 G1 S2 G2#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS -60 60 V Gate-Source Voltage VGS ±25 ±20 V Continuous Drain Current4 TC = 25 °C ID -9.7 16 A TC = 100 °C -6.1 10 Pulsed Drain Current1 IDM -25 30 Continuous Drain Current TA = 25 °C ID -2.8 5 TA = 70 °C -2.3 4 Avalanche Current IAS -16 20 Avalanche Energy L = 0.1mH EAS 12.8 20 mJ Power Dissipation3 TC = 25 °C PD 20 23 W TC = 100 °C 8.1 9 Power Dissipation3 TA = 25 °C PD 1.8 2 W TA = 70 °C 1.1 1.3 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 -60V 108mΩ -9.7A Q1 60V 38mΩ 16A
REV1.0 L-34-3 N- & P-Channel Enhancement Mode Field Effect Transistor P3606NEA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA Q2 °C / W Steady-State 100 Junction-to-Ambient2 t ≦10s RJA Q1 Steady-State 90 Junction-to-Case RJC Q2 6.1 Q1 5.5 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. 4Package limitation current :Q1=12A,Q2=-10A ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A Q2 -60 V VGS = 0V, ID = 250A Q1 60 Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A Q2 -1.3 -1.8 -2.3 VDS = VGS, ID = 250A Q1 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V Q2 ±100 nA VDS = 0V, VGS = ±20V Q1 ±100 Zero Gate Voltage Drain Current IDSS VDS = -60V, VGS = 0V Q2 -1 VDS = 60V, VGS = 0V Q1 1 VDS = -60V, VGS = 0V, TJ = 55 °C Q2 -10 VDS = 60V, VGS = 0V, TJ = 55 °C Q1 10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -3.6A Q2 123 150 mΩ VGS = 4.5V, ID = 6A Q1 35 50 VGS = -10V, ID = -3.6A Q2 90 108 VGS = 10V, ID = 6A Q1 30 38 Forward Transconductance1 gfs VDS = -5V, ID = -3.6A Q2 8.2 S VDS = 5V, ID = 6A Q1 23
REV1.0 L-34-3 N- & P-Channel Enhancement Mode Field Effect Transistor P3606NEA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss Q2 VGS = 0V, VDS = -30V, f = 1MHz VGS = 0V, VDS = 30V, f = 1MHz Q2 429 537 644 pF Q1 480 600 720 Output Capacitance Coss Q2 56 71 85 Q1 57 72 86 Reverse Transfer Capacitance Crss Q2 26 44 62 Q1 32 54 76 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Q2 4.5 9 13.5 Ω Q1 0.8 1.6 2.4 Total Gate Charge2 Qg VGS = 10V VDS = -30V , VGS = -10V, ID = -3.6A VDS = 30V , VGS = 10V, ID = 6A Q2 8.8 11 13 nC Q1 12 15.7 19 VGS = 4.5V Q2 5 6.4 7.7 Q1 7 9 11 Gate-Source Charge2 Qgs Q2 1.3 1.6 1.9 Q1 1.4 1.8 2.2 Gate-Drain Charge2 Qgd Q2 1.9 3.2 4.5 Q1 3.1 5.1 7.1 Turn-On Delay Time2 td(on) Q2 , VDS = -30V , ID -3.6A, VGS = -10V, RGEN =6Ω Q1 , VDS = 30V , ID 6A, VGS = 10V, RGEN =6Ω Q2 6.5 nS Q1 7.5 Rise Time2 tr Q2 11 Q1 18 Turn-Off Delay Time2 td(off) Q2 25 Q1 23 Fall Time2 tf Q2 24 Q1 35 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS Q2 -14 A Q1 16 Forward Voltage1 VSD IF = -3.6A, VGS = 0V Q2 -1 V IF = 6A, VGS = 0V Q1 1.3 Reverse Recovery Time trr Q2 IF = -3.6A, dlF/dt = 100A / S IF = 6A, dlF/dt = 100A / S Q2 6 13 20 nS Q1 7 14 21 Reverse Recovery Charge Qrr Q2 4 8.3 13 nC Q1 5 10 15 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current :Q1=12A,Q2=-10A
REV1.0 L-34-3 N- & P-Channel Enhancement Mode Field Effect Transistor P3606NEA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.2V VGS=2.8V VGS=3V 0.02 0.04 0.06 0.08 0 6 12 18 24 30 VGS=10V VGS=4.5V 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=6A 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=6A CISS COSS CRSS 100 200 300 400 500 600 700 800 0 12 24 36 48 60 TYPICAL PERFORMANCE CHARACTERISTICS N-CHANNEL
REV1.0 L-34-3 N- & P-Channel Enhancement Mode Field Effect Transistor P3606NEA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance VSD, Source-To-Drain Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) 0 4 8 12 16 20 VDS=30V ID=6A 150℃ 25℃ 0.1 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 90 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 90 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 90 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration(S)
REV1.0 L-34-3 N- & P-Channel Enhancement Mode Field Effect Transistor P3606NEA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 5.5 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 120 160 200 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 5.5 ˚C/W TC = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 5.5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec]
REV1.0 L-34-3 N- & P-Channel Enhancement Mode Field Effect Transistor P3606NEA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 0 1 2 3 4 5 6 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-3.9V VGS=-3.5V VGS=-3V 0.06 0.12 0.18 0.24 0.3 0 3 6 9 12 15 VGS=-10V VGS=-4.5V 0.06 0.12 0.18 0.24 0.3 2 4 6 8 10 ID=-3.6A CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-3.6A P-CHANNEL
REV1.0 L-34-3 N- & P-Channel Enhancement Mode Field Effect Transistor P3606NEA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Source-Drain Diode Forward Voltage Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] -VSD, Source-To-Drain Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) -VGS , Gate-To-Source Voltage(V) 0 3 6 9 12 15 VDS=-30V ID=-3.6A 150℃ 25℃ 0.1 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 100 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = -10V 2.TA =25˚C 3.RθJA = 100 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 100 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA -IS , Source Current(A) -ID , Drain Current(A) Power(W)
REV1.0 L-34-3 N- & P-Channel Enhancement Mode Field Effect Transistor P3606NEA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 120 160 200 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 6.1 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS = -10V 2.TC =25˚C 3.RθJC = 6.1 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 6.1 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC -ID , Drain Current(A) Power(W)