P3606BD NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
REV1.0 D-49-5 N-Channel Enhancement Mode Field Effect Transistor P3606BD TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 14 Pulsed Drain Current1 IDM 45 Avalanche Current IAS 18 Avalanche Energy L = 0.1mH EAS 16 mJ Power Dissipation TC = 25 °C PD 39 W TC = 100 °C 15.6 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 3.2 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 48V, VGS = 0V 1 VDS = 40V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 15A 34 47 mΩ VGS = 10V , ID = 20A 31 36 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 36mΩ 22A G D S
REV1.0 D-49-5 N-Channel Enhancement Mode Field Effect Transistor P3606BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 gfs VDS = 5V, ID = 20A 30 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 545 pF Output Capacitance Coss 74 Reverse Transfer Capacitance Crss 44 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.8 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 30V , ID = 20A 13.8 nC Qg(VGS=4.5V) 7.9 Gate-Source Charge2 Qgs 2 Gate-Drain Charge2 Qgd 4.9 Turn-On Delay Time2 td(on) VDS = 30V ID 20A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 11 Turn-Off Delay Time2 td(off) 33 Fall Time2 tf 10 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 22 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.3 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 17.6 nS Reverse Recovery Charge Qrr 8.8 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.0 D-49-5 N-Channel Enhancement Mode Field Effect Transistor P3606BD TO-252 Halogen-Free & Lead-Free NIKO-SEM VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) C , Capacitance(pF) VGS , Gate-To-Source Voltage(V) IS , Source Current(A) CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 0 3 6 9 12 15 VDS=30V ID=20A 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3V VGS=3.5V 0 1 2 3 4 5 25℃ 150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃ 125℃ -20℃
REV1.0 D-49-5 N-Channel Enhancement Mode Field Effect Transistor P3606BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] ID , Drain Current(A) Power(W) 100 120 140 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 3.2˚C/W TC=25˚C DC 100ms 10ms 1ms 0.1 100 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 3.2˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 3.2 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC