P3203CMG NIKOSEM | Alldatasheet

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Technical content

1 Jul-08-2011

N-Channel Logic Level Enhancement Mode Field Effect Transistor P3203CMG SOT-23 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current2 TA = 25 °C ID A TA = 70 °C 5 Pulsed Drain Current1,2 IDM 30 Power Dissipation TA = 25 °C PD 1.25 W TA = 70 °C 0.8 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient3 RJA 100 °C/W 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 0.45 0.7 1.2 Gate-Body Leakage IGSS VDS = 0V, VGS = ±12V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 On-State Drain Current1 ID(ON) VDS = 5V, VGS = 4.5V 30 A Drain-Source On-State Resistance1 RDS(ON) VGS = 2.5V, ID = 4A 32 52 mΩ VGS = 4.5V, ID = 5A 24 32 VGS = 10V, ID = 6A 22 28 Forward Transconductance1 gfs VDS = 5V, ID = 5A 33 S G : GATE D : DRAIN S : SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30 32mΩ 6A G D S

2 Jul-08-2011

N-Channel Logic Level Enhancement Mode Field Effect Transistor P3203CMG SOT-23 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 620 pF Output Capacitance Coss 69 Reverse Transfer Capacitance Crss 62 Total Gate Charge2 Qg VDS = 15V , VGS = 4.5V, ID = 5A nC Gate-Source Charge2 Qgs 1.5 Gate-Drain Charge2 Qgd 3 Turn-On Delay Time2 td(on) 4.5 nS Rise Time2 tr VDS =15V, 4 Turn-Off Delay Time2 td(off) ID  5A, VGS = 4.5V, RGS = 6Ω 37 Fall Time2 tf 6 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 6 A Forward Voltage1 VSD IF = 1.3A, VGS = 0V 1.3 V Reverse Recovery Time trr IF = 6A,dIF/dt = 100 A/μs 10.5 nS Reverse Recovery Charge Qrr 2.1 C 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature.

3 Jul-08-2011

N-Channel Logic Level Enhancement Mode Field Effect Transistor P3203CMG SOT-23 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 CISS COSS CRSS 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 25℃ 150℃ 0.1 100 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -25 0 25 50 75 100 125 150 VGS=4.5V ID=5A VGS =10V VGS =2.5V VGS=2V VGS =4.5V 0 1 2 3 4 5 25℃ 125℃ -20℃ 0.5 1 1.5 2 2.5 3 Qg , Total Gate Charge(nC) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage IS , Source Current(A) VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0 2 4 6 8 VDS=15V ID=5A

4 Jul-08-2011

N-Channel Logic Level Enhancement Mode Field Effect Transistor P3203CMG SOT-23 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 100mS 10mS DC 1mS 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA =100˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 100˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 100 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]