P3010BV NIKOSEM | Alldatasheet

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N-Channel Enhancement Mode Field Effect Transistor P3010BV SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV1.0 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TA = 25 °C ID 5.8 A TA = 70 °C 4.6 Pulsed Drain Current1 IDM 37 Avalanche Current IAS 12 Avalanche Energy L = 1mH EAS 72 mJ Power Dissipation TA = 25 °C PD 2.3 W TA = 70 °C 1.5 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 53 °C / W Junction-to-Case RJC 25 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. .ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V 1 A VDS = 80V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 5A 27 35 mΩ VGS =10V, ID = 5A 25.5 30 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 30mΩ 5.8A G: GATE D: DRAIN S: SOURCE G D S

N-Channel Enhancement Mode Field Effect Transistor P3010BV SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV1.0 Forward Transconductance1 gfs VDS = 5V, ID = 5A 46 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 1908 pF Output Capacitance Coss 138 Reverse Transfer Capacitance Crss 87 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 0.8 Ω Total Gate Charge2 Qg VDS = 50V , VGS = 10V, ID =5A nC Gate-Source Charge2 Qgs 5.6 Gate-Drain Charge2 Qgd 12.5 Turn-On Delay Time2 td(on) VDS = 50V , ID  5A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 45 Turn-Off Delay Time2 td(off) 47 Fall Time2 tf 38 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 1.9 A Forward Voltage1 VSD IF = 5A, VGS = 0V 1.2 V Diode Reverse Recovery Time trr IF=5A, dI/dt=100A/μs 28 nS Diode Reverse Recovery Charge Qrr 25 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature.

N-Channel Enhancement Mode Field Effect Transistor P3010BV SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=5A 25℃ 150℃ 0.1 100 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V VGS=2.7V VGS=3.2V 0 8 16 24 32 40 VDS=50V ID=5A CISS COSS CRSS 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance C , Capacitance(pF)

N-Channel Enhancement Mode Field Effect Transistor P3010BV SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV1.0 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 53˚C/W TA=25˚C 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 53˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 53 ℃/W 3.TJ-TA = P*RthJA(t) Safe Operating Area Single Pulse Maximum Power Dissipation Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V)