P2A06BT NIKOSEM | Alldatasheet
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REV 1.1 H-48-3 N-Channel Logic Level Enhancement Mode Field Effect Transistor P2A06BT TO-220 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±20 V Continuous Drain Current2,3 TC = 25 °C ID 198 A TC = 100 °C 140 Pulsed Drain Current1,2 IDM 900 Avalanche Current IAS 123 Avalanche Energy L = 0.1mH EAS 754 mJ Power Dissipation TC = 25 °C PD 230 W TC = 100 °C 115 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 175 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 0.65 °C / W Junction-to-Ambient RJA 62.5 °C / W 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3Package limitation current is 110A. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 48V, VGS = 0V 1 VDS = 40V, VGS = 0V, TJ = 125 °C 10 1.GATE 2.DRAIN 3.SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 2.8mΩ 198A G D S
REV 1.1 H-48-3 N-Channel Logic Level Enhancement Mode Field Effect Transistor P2A06BT TO-220 Halogen-Free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 20A 2.4 3.5 mΩ VGS = 10V, ID = 20A 2.2 2.8 Forward Transconductance1 gfs VDS = 10V, ID = 20A 72 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 10449 pF Output Capacitance Coss 1229 Reverse Transfer Capacitance Crss 1033 Gate Resistance Rg VGS = 0V, VDS = 0V ,f = 1MHz 0.9 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 30V, VGS = 10V, ID = 20A 312 nC Qg(VGS=4.5V) 169 Gate-Source Charge2 Qgs 35 Gate-Drain Charge2 Qgd 110 Turn-On Delay Time2 td(on) VDD = 30V ID 20A, VGS = 10V, RGEN = 3Ω nS Rise Time2 tr 99 Turn-Off Delay Time2 td(off) 413 Fall Time2 tf 242 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 191 A Forward Voltage1 VSD IF = 20A,VGS = 0V 1.2 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 62 nS Reverse Recovery Charge Qrr 90 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. 3Package limitation current is 110A.
REV 1.1 H-48-3 N-Channel Logic Level Enhancement Mode Field Effect Transistor P2A06BT TO-220 Halogen-Free & Lead-Free NIKO-SEM 0 1 2 3 4 5 Transfer Characteristics ID, Drain-To-Source Current(A) Output Characteristics ID, Drain-To-Source Current(A) 25℃ -20℃ 125℃ VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V) VGS , Gate-To-Source Voltage(V) Gate charge Characteristics Characteristics C , Capacitance(pF) Capacitance Characteristic Qg , Total Gate Charge(nC) VDS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=4.5V VGS=3.2V VGS=3V 0 70 140 210 280 350 VDS=30V ID=20A CISS COSS CRSS 2000 4000 6000 8000 10000 12000 14000 16000 0 5 10 15 20 25 30 0.004 0.008 0.012 0.016 0.02 2 4 6 8 10 ID=20A 0.0005 0.001 0.0015 0.002 0.0025 0.003 0.0035 0.004 0 8 16 24 32 40 VGS=10V VGS=4.5V
REV 1.1 H-48-3 N-Channel Logic Level Enhancement Mode Field Effect Transistor P2A06BT TO-220 Halogen-Free & Lead-Free NIKO-SEM 600 1200 1800 2400 3000 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 0.65 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 100 1000 10000 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 65 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Single Pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 0.65 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC On-Resistance VS Temperature Source-Drain Diode Forward Voltage IS , Source Current(A) Normalized Drain to Source ON-Resistance VSD, Source-To-Drain Voltage(V) TJ , Junction Temperature(˚C) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) r(t) , Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] 0.4 0.9 1.4 1.9 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃ 150℃ 0.1 100
REV 1.1 H-48-3 N-Channel Logic Level Enhancement Mode Field Effect Transistor P2A06BT TO-220 Halogen-Free & Lead-Free NIKO-SEM