P2904BD NIKOSEM | Alldatasheet

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N-Channel Logic Level Enhancement Mode Field Effect Transistor P2904BD TO-252 Halogen-Free & Lead- Free NIKO -SEM REV 1.0 Oct-14-2010 ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 40 V Gate-Source Voltage VGS ±20 V TC = 25 °C 25 Continuous Drain Current TC = 70 °C ID Pulsed Drain Current 1 IDM 75 Avalanche Current IAS 27 A Avalanche Energy 2 L = 0.1mH E AS 37 mJ TC = 25 °C 30 Power Dissipation TC = 70 °C PD W Operating Junction & Storage Temperature Range Tj, T stg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RθJc 4.1 °C / W Junction-to-Ambient RθJA 40 °C / W 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, I D = 250 µA 40 Gate Threshold Voltage V GS(th) VDS = V GS , I D = 250 µA 2 2.4 3 V Gate-Body Leakage I GSS V DS = 0V, V GS = ±20V ±250 nA VDS = 32V, V GS = 0V 1 Zero Gate Voltage Drain Current IDSS VDS = 30V, V GS = 0V, T J = 125 °C 10 µA On-State Drain Current 1 I D(ON) V DS = 5V, V GS = 10V 75 A PRODUCT SUMMARY V(BR)DSS R DS(ON) ID 40V 29mΩ 25A G S D 1. GATE 2. DRAIN 3. SOURCE

N-Channel Logic Level Enhancement Mode Field Effect Transistor P2904BD TO-252 Halogen-Free & Lead- Free NIKO -SEM REV 1.0 Oct-14-2010 VGS = 5V, I D = 8A 26 50 VGS = 7V, I D = 8A 22 45 Drain-Source On-State Resistance

1 RDS(ON)

VGS = 10V, I D = 10A 19 29 mΩ Forward Transconductance 1 g fs V DS = 5V, I D = 10A 30 S DYNAMIC Input Capacitance C iss 1150 Output Capacitance C oss 157 Reverse Transfer Capacitance Crss VGS = 0V, V DS = 20V, f = 1MHz pF Total Gate Charge 2 Q g(VGS = 10V) 19 Total Gate Charge 2 Q g(VGS = 4.5V) 9 Gate-Source Charge 2 Q gs 4.5 Gate-Drain Charge 2 Q gd VDS = 0.5V (BR)DSS , I D = 10A nC Gate Resistance R g V GS = 0V, V DS = 0V, f = 1MHz 1.55 Ω Turn-On Delay Time 2 t d(on) 10 Rise Time 2 t r VDS = 20V, R L = 1 Ω 6 Turn-Off Delay Time 2 t d(off) ID ≅ 1A, V GS = 10V, R GS = 6 Ω 26 Fall Time 2 t f 6 nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T J = 25 °C) Continuous Current I S 23 A Forward Voltage 1 V SD I F = 10A, V GS = 0V 1.3 V Reverse Recovery Time t rr 38 nS Reverse Recovery Charge Q rr IF =10A, dl F /dt = 100A / µS 29 nC 1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. 2Independent of operating temperature.

N-Channel Logic Level Enhancement Mode Field Effect Transistor P2904BD TO-252 Halogen-Free & Lead- Free NIKO -SEM REV 1.0 Oct-14-2010 Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 RDS(ON) ╳╳ ╳╳ VGS =10V ID =10A RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ Ciss Coss Crss 0.00E+00 3.00E+02 6.00E+02 9.00E+02 1.20E+03 1.50E+03 0 5 10 15 20 25 30 0 4 8 12 16 20 ID =10A VDS =20V TJ=125° C TJ=25° C TJ=-20° C 0 1 2 3 4 5 VG S = 10V VG S = 5 V VG S = 7V 1.0E+01 TJ =150° C TJ =25°C 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E+02 1.0E+03 1.4 Output Characteristics ID , Drain-To-Source Current(A) Transfer Characteristics ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature RDS(ON) ON-Resistance(OHM) TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) VSD , Source-To-Drain Voltage(V) IS , Source Current(A)

N-Channel Logic Level Enhancement Mode Field Effect Transistor P2904BD TO-252 Halogen-Free & Lead- Free NIKO -SEM REV 1.0 Oct-14-2010 single Pluse Duty Cycle=0.5 0.2 0.1 0.05 0.02 0.01 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01 Note 1.Duty cycle, D= t1 / t2 2.Rth JC = 4.1 oC/W 3.T J -TC = P*Rth JC (t) 4.Rth JC (t) = r(t)*Rth JC 300 600 900 1200 1500 0.0001 0.001 0.01 0.1 1 10 SINGLE PULSE R θJC = 4.1 ˚˚ ˚˚C/W TC =25 ˚˚ ˚˚C 1ms 100us DC 100ms 10ms 0.1 100 0.1 1 10 100 NOTE : 1.V GS = 10V 2.T C =25 ˚˚ ˚˚C 3.R θJC = 4.1 ˚˚ ˚˚C/W 4.Single Pulse Operation in This Area is Limited by R DS(ON) ↓↓ ↓↓ Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]