P2610BK NIKOSEM | Alldatasheet
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REV 1.0 F-26-2 N-Channel Enhancement Mode Field Effect Transistor P2610BK PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM G D S G DDDD SSS#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current4 TC = 25 °C ID A TC = 100 °C 16 Pulsed Drain Current1 IDM 50 Continuous Drain Current TA = 25 °C ID TA = 70 °C 7 Avalanche Current IAS 14 Avalanche Energy L = 1mH EAS 98 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 17 Power Dissipation3 TA = 25 °C PD W TA = 70 °C 3.2 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 25 °C / W Junction-to-Ambient2 Steady-State RJA 50 Junction-to-Case Steady-State RJC 3 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. 4Package limitation current is 29A. G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 26.8mΩ 25A
REV 1.0 F-26-2 N-Channel Enhancement Mode Field Effect Transistor P2610BK PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.7 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V 1 VDS = 80V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 9A 23 35 mΩ VGS = 10V, ID = 9A 22 26.8 Forward Transconductance1 gfs VDS = 5V, ID = 9A 54 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 2013 pF Output Capacitance Coss 145 Reverse Transfer Capacitance Crss 97 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1 Ω Total Gate Charge2 Qg VGS = 10V VDS = 50V , ID = 9A nC VGS = 4.5V 24 Gate-Source Charge2 Qgs 6 Gate-Drain Charge2 Qgd 13 Turn-On Delay Time2 td(on) VDS = 50V , ID 9A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 45 Turn-Off Delay Time2 td(off) 46 Fall Time2 tf 37 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 25 A Forward Voltage1 VSD IF = 9A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 9A, dlF/dt = 100A / S 26 nS Reverse Recovery Charge Qrr 19 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.0 F-26-2 N-Channel Enhancement Mode Field Effect Transistor P2610BK PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 0 1 2 3 4 5 CRSS 500 1000 1500 2000 2500 0 5 10 15 20 25 30 On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) 25℃ 125℃ -20℃ COSS CISS 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3V 0.01 0.02 0.03 0.04 0.05 0 4 8 12 16 20 VGS=10V VGS=4.5V 0.01 0.02 0.03 0.04 0.05 2 4 6 8 10 ID=9A 0 10 20 30 40 50 60 VDS=50V ID=9A
REV 1.0 F-26-2 N-Channel Enhancement Mode Field Effect Transistor P2610BK PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 50˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=9A 25℃ 150℃ 0.1 100 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 50˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 50 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA