P2610BD NIKOSEM | Alldatasheet
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REV1.0 E-3-2 N-Channel Enhancement Mode Field Effect Transistor P2610BD TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 23 Pulsed Drain Current1 IDM 80 Avalanche Current IAS 13.9 Avalanche Energy L = 0.1mH EAS 9.7 mJ Power Dissipation TC = 25 °C PD 78 W TC = 100 °C 31 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1.6 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Calculated continuous current based on maximum allowable junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V 1 A VDS = 80V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 10A 24 35 mΩ VGS = 10V , ID = 10A 22 26.8 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 26.8mΩ 36A G D S
REV1.0 E-3-2 N-Channel Enhancement Mode Field Effect Transistor P2610BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 gfs VDS = 5V, ID = 10A 55 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 1918 pF Output Capacitance Coss 139 Reverse Transfer Capacitance Crss 88 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 0.8 Ω Total Gate Charge2 Qg VGS = 10 V, VDS = 50V , ID = 10A 41.5 nC Gate-Source Charge2 Qgs 5.7 Gate-Drain Charge2 Qgd 11.6 Turn-On Delay Time2 td(on) VDS = 50V ID 10A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 42 Turn-Off Delay Time2 td(off) 43 Fall Time2 tf 34 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 36 A Forward Voltage1 VSD IF = 10A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 10A, dlF/dt = 100A / S 29.3 nS Reverse Recovery Charge Qrr 290 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Calculated continuous current based on maximum allowable junction temperature.
REV1.0 E-3-2 N-Channel Enhancement Mode Field Effect Transistor P2610BD TO-252 Halogen-Free & Lead-Free NIKO-SEM 25℃ 150℃ 0.1 100 CISS COSS CRSS 500 1000 1500 2000 2500 0 5 10 15 20 25 30 0 8 16 24 32 40 VDS=50V ID=10A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=10A 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3V VGS=2.5V 25℃ 125℃ -20℃ 0 1 2 3 4 5 VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) Normalized Drain to Source ON-Resistance VGS , Gate-To-Source Voltage(V) IS , Source Current(A)
REV1.0 E-3-2 N-Channel Enhancement Mode Field Effect Transistor P2610BD TO-252 Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.6 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC DC 100ms 10ms 1ms 0.1 100 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 1.6˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 100 200 300 400 500 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.6˚C/W TC=25˚C Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec]