P2503NPG NIKOSEM | Alldatasheet
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REV 1.2
1 Feb-09-2010
NU & PUChannel Enhancement Mode Field Effect Transistor P2503NPG DIPU8 HalogenUFree & LeadUFree NIKO USEM ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL NUChannel PUChannel UNITS Drain-Source Voltage V DS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V TC = 25 °C 7 -5 Continuous Drain Current TC = 70 °C ID 6 -4 Pulsed Drain Current 1 IDM 20 -20 Avalanche Current IAS 18 -18 A Avalanche Energy L = 0.1mH E AS 19 mJ TC = 25 °C 2.5 Power Dissipation TC = 70 °C PD 1.6 W Junction & Storage Temperature Range T j, T stg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RθJA 50 °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) LIMITS UNIT PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX STATIC VGS = 0V, I D = 250 µA Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, I D = -250 µA N-Ch P-Ch -30 VDS = V GS , I D = 250 µA Gate Threshold Voltage V GS(th) VDS = V GS , I D = -250 µA N-Ch P-Ch 1.5 -1.5 2.5 -2.5 V G : GATE D : DRAIN S : SOURCE PRODUCT SUMMARY V (BR)DSS RDS(ON) ID N-Channel 30 25m Ω 7A P-Channel -30 45m Ω -5A #1S1 G1 S2 G2 D1 D1 D2 D2
REV 1.2
2 Feb-09-2010
NU & PUChannel Enhancement Mode Field Effect Transistor P2503NPG DIPU8 HalogenUFree & LeadUFree NIKO USEM VDS = 0V, V GS = ±20V Gate-Body Leakage I GSS VDS = 0V, V GS = ±20V N-Ch P-Ch ±100 ±100 nA VDS = 24V, V GS = 0V VDS = -24V, V GS = 0V N-Ch P-Ch VDS = 20V, V GS = 0V, T J = 55 °C Zero Gate Voltage Drain Current IDSS VDS = -20V, V GS = 0V, T J = 55 °C N-Ch P-Ch -10 µA VDS = 5V, V GS = 10V On-State Drain Current 1 I D(ON) VDS =-5V, V GS = -10V N-Ch P-Ch -20 A VGS = 4.5V, I D = 6A VGS = -4.5V, I D = -4A N-Ch P-Ch VGS = 10V, I D = 7A Drain-Source On-State Resistance 1 RDS(ON) VGS = -10V, I D = -5A N-Ch P-Ch mΩ VDS = 5V, I D = 7A Forward Transconductance 1 g fs VDS = -5V, I D = -5A N-Ch P-Ch S DYNAMIC Input Capacitance C iss N-Ch P-Ch 790 690 Output Capacitance C oss N-Ch P-Ch 175 310 Reverse Transfer Capacitance Crss N-Channel VGS = 0V, V DS = 10V, f = 1MHz P-Channel VGS = 0V, V DS = -10V, f = 1MHz N-Ch P-Ch pF Gate Resistance Rg V GS = 0V, V DS = 0V, f = 1MHz N-Ch P-Ch 6.25 Ω
REV 1.2
3 Feb-09-2010
NU & PUChannel Enhancement Mode Field Effect Transistor P2503NPG DIPU8 HalogenUFree & LeadUFree NIKO USEM Total Gate Charge 2 Q g N-Ch P-Ch Gate-Source Charge 2 Q gs N-Ch P-Ch 2.5 2.2 Gate-Drain Charge 2 Q gd N-Channel VDS = 0.5V (BR)DSS , V GS = 10V, ID = 7A P-Channel VDS = 0.5V (BR)DSS , V GS = -10V, ID = -5A N-Ch P-Ch 2.1 1.9 nC Turn-On Delay Time 2 t d(on) N-Ch P-Ch 2.2 6.7 4.4 13.4 Rise Time 2 t r N-Ch P-Ch 7.5 9.7 19.4 Turn-Off Delay Time 2 t d(off) N-Ch P-Ch 11.8 19.8 21.3 35.6 Fall Time 2 t f N-Channel VDD = 10V ID ≅ 1A, V GS = 10V, R GEN = 6 Ω P-Channel VDD = -10V ID ≅ -1A, V GS = -10V, R GEN = 6 Ω N-Ch P-Ch 3.7 12.3 7.4 22.2 nS SOURCEUDRAIN DIODE RATINGS AND CHARACTERISTICS (T J = 25 °C) Continuous Current I S N-Ch P-Ch 1.3 -1.3 Pulsed Current 3 I SM N-Ch P-Ch 2.6 -2.6 A IF = 7A, V GS = 0V Forward Voltage 1 V SD IF = -5A, V GS = 0V N-Ch P-Ch V 1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P2503NPG”, DATE CODE or LOT #
REV 1.2
4 Feb-09-2010
NU & PUChannel Enhancement Mode Field Effect Transistor P2503NPG DIPU8 HalogenUFree & LeadUFree NIKO USEM NUCHANNEL V - Body Diode Forward Voltage(V) Is - Reverse Drain Current(A) 0.001 0.01 0.1 0.4 SD 0.2 0.6 V = 0V 100 A GS 1.0 0.8 1.2 1.4
REV 1.2
5 Feb-09-2010
NU & PUChannel Enhancement Mode Field Effect Transistor P2503NPG DIPU8 HalogenUFree & LeadUFree NIKO USEM 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 SINGLE PULSE R θJA = 50 ˚˚ ˚˚C/W TA=25 ˚˚ ˚˚C 1ms 100us 10S DC 100ms 10ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.V GS = 10V 2.T A=25 ˚˚ ˚˚C 3.R θJA =50 ˚˚ ˚˚C/W 4.Single Pulse Operation in This Area is Limited by R DS(ON) ↓↓ ↓↓
REV 1.2
6 Feb-09-2010
NU & PUChannel Enhancement Mode Field Effect Transistor P2503NPG DIPU8 HalogenUFree & LeadUFree NIKO USEM PUCHANNEL V - Body Diode Forward Voltage(V) Is - Reverse Drain Current(A) 0.001 0.01 0.1 0.4 SD 0.2 0.6 V = 0V 100 A GS 1.0 0.8 1.2 1.4
REV 1.2
7 Feb-09-2010
NU & PUChannel Enhancement Mode Field Effect Transistor P2503NPG DIPU8 HalogenUFree & LeadUFree NIKO USEM single Pluse Duty Cycle=0.5 0.2 0.1 0.05 0.02 0.01 1.00EU03 1.00EU02 1.00EU01 1.00E+00 1.00E+01 No te 1.Duty cycle, D= t1 / t2 2.R thJA = 50 ℃℃ ℃℃/W 3.T JUTA = P*R thJA(t) 4.R thJA(t) = r(t)*R thJA 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 SINGLE PULSE R θJA = 50 ˚˚ ˚˚C/W TA=25 ˚˚ ˚˚C 1ms 100us 10S DC 100ms 10ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.V GS = 10V 2.T A=25 ˚˚ ˚˚C 3.R θJA =50 ˚˚ ˚˚C/W 4.Single Pulse Operation in This Area is Limited by R DS(ON) ↓↓ ↓↓