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Rev1.0 Dec-17-2008 N- & P-Channel Enhancement Mode Field Effect Transistor P2402OV SOP-8 Halogen-Free & Lead-Free NIKO-SEM PRODUCT SUMMARY V (BR)DSS R DS(ON) I D N-Channel 20 24mΩ 10A P-Channel -20 43mΩ -5.2A ABSOLUTE MAXIMUM RATINGS (T C = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage V DS 20 -20 V Gate-Source Voltage V GS ±12 ±12 V Continuous Drain Current TA = 25 °C ID 10 -5.2 A TA = 70 °C 6.3 -3.2 Pulsed Drain Current1 I DM 40 -21 Power Dissipation TA = 25 °C PD 2.5 W TA = 70 °C 1.6 Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 50 °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle 1% G :GATE D :DRAIN S :SOURCE
Rev1.0 Dec-17-2008 N- & P-Channel Enhancement Mode Field Effect Transistor P2402OV SOP-8 Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (T C = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A N-Ch P-Ch -20 V VGS = 0V, ID = -250A Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A N-Ch P-Ch 0.4 -0.4 0.8 -0.8 1.2 -1.2VDS = VGS, ID = -250A Gate-Body Leakage I GSS VDS = 0V, VGS = ±12V N-Ch P-Ch ±100 ±100 nA VDS = 0V, VGS = ±12V Zero Gate Voltage Drain Current I DSS VDS = 16V, VGS = 0V N-Ch P-Ch VDS = -16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 55 °C N-Ch P-Ch -10VDS = -16V, VGS = 0V, TJ = 55 °C Drain-Source On-State Resistance RDS(ON) VGS = 2.5V, ID = 5.2A N-Ch P-Ch mΩ VGS = -2.5V, ID = -4A VGS = 4.5V, ID = 8A N-Ch P-Ch 43VGS = -4.5V, ID = -5A DYNAMIC Input Capacitance C iss N-Channel VGS = 0V, VDS = 10V, f = 1MHz P-Channel VGS = 0V, VDS = -10V, f = 1MHz N-Ch P-Ch 732 1110 pF Output Capacitance C oss N-Ch P-Ch 241 242 Reverse Transfer Capacitance C rss N-Ch P-Ch 169 173 Total Gate Charge2 Q g N-Channel VDS = 10V, VGS = 4.5V, ID = 5A P-Channel VDS = -10V, VGS = -4.5V, ID = -5A N-Ch P-Ch nC Gate-Source Charge2 Q gs N-Ch P-Ch 0.8 Gate-Drain Charge2 Q gd N-Ch P-Ch 3.7 3.5
Rev1.0 Dec-17-2008 N- & P-Channel Enhancement Mode Field Effect Transistor P2402OV SOP-8 Halogen-Free & Lead-Free NIKO-SEM Turn-On Delay Time2 t d(on) N-Channel VDS = 10V, ID 1A, VGS = 4.5V, RGEN = 10Ω P-Channel VDS = -4V, ID -1A, VGS = -4.5V, RGEN = 10Ω N-Ch P-Ch nS Rise Time2 t r N-Ch P-Ch Turn-Off Delay Time2 t d(off) N-Ch P-Ch Fall Time2 t f N-Ch P-Ch SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current I S N-Ch P-Ch 1.9 -1.9 A Pulsed Current3 I SM N-Ch P-Ch 7.6 Forward Voltage1 V SD IF = 1A, VGS = 0V N-Ch P-Ch 1.3 -1.3 V IF = -1A, VGS = 0V 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature.
Rev1.0 Dec-17-2008 N- & P-Channel Enhancement Mode Field Effect Transistor P2402OV SOP-8 Halogen-Free & Lead-Free NIKO-SEM N-CHANNEL - 50 - 25 0 25 50 75 100 125 150 RDSON x 0.6 TJ - Junction Temperature(C°) RDSON x 0.8 RDSON x 1.0 RDSON x 1.2 RDSON x 1.4 RDSON x 1.6 RDSON x 1.8 rDS(ON) - On-Resistance (Normalized) On-Resistance vs. Junction Temperature VGS =4.5V ID =8A
Rev1.0 Dec-17-2008 N- & P-Channel Enhancement Mode Field Effect Transistor P2402OV SOP-8 Halogen-Free & Lead-Free NIKO-SEM Crss Coss Ciss f=1MHz VGS=0V C - Capacitance(pF) Capacitance 200 400 600 800 1000 02 4 68 1 0 1 2 VDS - Drain-to-Source Voltage(V) Maxmum Safe Operating Area. DC 100ms 10ms 100 0.1 0.01 1001010.1 1ms VDS,Drain-Source Voltage(V) ID,Drain Current(A) RDS(ON) LIMIT SINGLE PULSE RθJA=50°C/W TA=25°C
Rev1.0 Dec-17-2008 N- & P-Channel Enhancement Mode Field Effect Transistor P2402OV SOP-8 Halogen-Free & Lead-Free NIKO-SEM RθJA(t) = r(t) * RθJA Duty Cycle, D= t1/ t2 TJ-TA=P*RθJA(t) P(pk) Transisent Thermal Response Curve. t1 Tim e(SEC) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 3001001010.10.010.0010.0001 0.001 RθJA=50°C/W
Rev1.0 Dec-17-2008 N- & P-Channel Enhancement Mode Field Effect Transistor P2402OV SOP-8 Halogen-Free & Lead-Free NIKO-SEM P-CHANNEL - 50 - 25 0 25 50 75 100 125 150 RDSON x 0.6 TJ - Junction Temperature(C°) RDSON x 0.8 RDSON x 1.0 RDSON x 1.2 RDSON x 1.4 RDSON x 1.6 RDSON x 1.8 rDS(ON) - On-Resistance (Normalized) On-Resistance vs. Junction Temperature VGS =-4.5V ID =-4.3A
Rev1.0 Dec-17-2008 N- & P-Channel Enhancement Mode Field Effect Transistor P2402OV SOP-8 Halogen-Free & Lead-Free NIKO-SEM Crss Coss Ciss f=1MHz VGS=0V C - Capacitance(pF) Capacitance 300 600 900 1200 1500 02 4 68 1 0 1 2 -VDS - Drain-to-Source Voltage(V) Maxmum Safe Operating Area. -VDS,Drain-Source Voltage(V) -ID,Drain Current(A)SINGLE PULSE RθJA=50°C/W TA=25°C DC 100ms 10ms LIMITRDS(ON) 100 0.1 0.01 1001010.1 1ms
Rev1.0 Dec-17-2008 N- & P-Channel Enhancement Mode Field Effect Transistor P2402OV SOP-8 Halogen-Free & Lead-Free NIKO-SEM RθJA(t) = r(t) * RθJA Duty Cycle, D= t1/ t2 TJ-TA=P*RθJA(t) P(pk) Transisent Thermal Response Curve. t1 Time(SEC) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 3001001010.10.010.0010.0001 0.001 RθJA=50°C/W